Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1764-1767 ◽  
Author(s):  
Shui Hsiang Su ◽  
Meiso Yokoyama ◽  
Yan Kuin Su
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching ◽  
Zns Films

Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen

1992 ◽  
Vol 60 (24) ◽  
pp. 3025-3026 ◽  
Author(s):  
K. Ohtsuka ◽  
M. Imaizumi ◽  
H. Sugimoto ◽  
T. Isu ◽  
Y. Endoh
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching

Fabrication of GaN mesa structures

1996 ◽  
Vol 1 ◽  
Author(s):  
K.V. Vassilevski ◽  
M.G. Rastegaeva ◽  
A.I. Babanin ◽  
I.P. Nikitina ◽  
V.A. Dmitriev
Keyword(s):  
Ohmic Contacts ◽  
Reactive Ion Etching ◽  
Contact Resistivity ◽  
Gas Mixture ◽  
Ion Etching ◽  
Etch Rates ◽  
Ar Gas

We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10−5  Ω×cm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4×10−2 Ω×cm2 were formed. Both types of contacts were used as masks for GaN reactive ion etching (RIE) in a CCl2F2/Ar gas mixture. Maximum etch rates of ~ 40 nm/min were obtained. Mesa structures up to 3 μm in height were formed.

Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

2015 ◽  
Vol 30 (6) ◽  
pp. 065014 ◽  
Author(s):  
J Abautret ◽  
A Evirgen ◽  
J P Perez ◽  
Y Laaroussi ◽  
A Cordat ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching ◽  
Inductively Coupled

Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Yung-Jr Hung ◽  
San-Liang Lee ◽  
Brian J. Thibeault ◽  
Larry A. Coldren
Keyword(s):  
Etching Rate ◽  
Reactive Ion Etching ◽  
Single Step ◽  
Gas Mixture ◽  
Optical Performance ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
High Etching Rate ◽  
Sidewall Angle ◽  
Nanopillar Arrays

AbstractA simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of single-step DRIE process. We further fabricate a tapered silicon nanopillar array and observe its photonic bandgap property. We believe that the good optical performance of this tapered silicon nanopillar array realized by the proposed approach shows the promising of this process for various applications.

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