Limiting Amplifier with 25 THz Gain-Bandwidth-Product and Internal Amplitude Control for Data Rates beyond 50 Gbit/s in 130 nm SiGe

Abstract. This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidth-product of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5 mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3 V including output drivers is 837 mW.

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The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

Sensors ◽

10.3390/s19153399 ◽

2019 ◽

Vol 19 (15) ◽

pp. 3399 ◽

Cited By ~ 2

Author(s):

Jheng-Jie Liu ◽

Wen-Jeng Ho ◽

June-Yan Chen ◽

Jian-Nan Lin ◽

Chi-Jen Teng ◽

...

Keyword(s):

Electric Fields ◽

High Speed ◽

Gain Bandwidth ◽

Mesa Structure ◽

Multiplication Gain ◽

Data Rates ◽

Field Control ◽

Side Walls ◽

Speed Response

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable high multiplication gain and high-speed response thanks to the thickness and concentration of the field-control and multiplication layers. A mesa active region of 45 micrometers was defined using a bromine-based isotropic wet etching solution. The side walls of the mesa were subjected to sulfur treatment before being coated with a thick polyimide layer to reduce current leakage, while lowering capacitance and increasing response speeds. The breakdown voltage (VBR) of the proposed SAGFM APDs was approximately 32 V. Under reverse bias of 0.9 VBR at room temperature, the proposed device achieved dark current of 31.4 nA, capacitance of 0.19 pF and multiplication gain of 9.8. The 3-dB frequency response was 8.97 GHz and the gain-bandwidth product was 88 GHz. A rise time of 42.0 ps was derived from eye-diagrams at 0.9 VBR. There was notable absence of intersymbol-interference and the signals remained error-free at data-rates of up to 12.5 Gbps.

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A low-phase noise D-band signal source based on 130 nm SiGe BiCMOS and 0.15 µm AlGaN/GaN HEMT technologies

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078719000291 ◽

2019 ◽

Vol 11 (5-6) ◽

pp. 456-465

Author(s):

Thanh Ngoc Thi Do ◽

Mingquan Bao ◽

Zhongxia Simon He ◽

Ahmed Hassona ◽

Dan Kuylenstierna ◽

...

Keyword(s):

Phase Noise ◽

Output Power ◽

Communication Systems ◽

Signal Source ◽

Limiting Amplifier ◽

Gan Hemt ◽

Data Rates ◽

Sige Bicmos ◽

Low Phase Noise ◽

Band Signal

AbstractThis paper reports on a record-low-phase noise D-band signal source with 5 dBm output power, and 1.3 GHz tuning range. The source is based on the unconventional combination of a fundamental frequency 23 GHz oscillator in 150 nm AlGaN/GaN HEMT technology followed by a 130 nm SiGe BiCMOS MMIC including a sixtupler and an amplifier. The amplifier operates in compression mode as power-limiting amplifier, to equalize the source output power so that it is nearly independent of the oscillator's gate and drain bias voltages used for tuning the frequency of the source. The choice of using a GaN HEMT oscillator is motivated by the need for a low oscillator noise floor, which recently has been demonstrated as a bottle-neck for data rates in wideband millimeter-wave communication systems. The phase noise performance of this signal source is −128 dBc/Hz at 10 MHz-offset. To the best of the authors’ knowledge, this result is the lowest reported phase noise of D-band signal source.

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High gain-bandwidth-product avalanche photodiodes for multigigabit/s data rates

10.1063/1.36815 ◽

1987 ◽

Cited By ~ 1

Author(s):

J. C. Campbell

Keyword(s):

Avalanche Photodiodes ◽

High Gain ◽

Gain Bandwidth ◽

Data Rates

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Energy-Efficient Gain Cell and Its Applications in the Limiting Amplifier and Ring Oscillator for Gbps Communications

Journal of Circuits System and Computers ◽

10.1142/s021812661850007x ◽

2017 ◽

Vol 27 (01) ◽

pp. 1850007 ◽

Cited By ~ 1

Author(s):

Yutong Ying ◽

Xuefei Bai ◽

Fujiang Lin

Keyword(s):

Power Consumption ◽

Energy Efficient ◽

Oscillation Frequency ◽

High Gain ◽

Ring Oscillator ◽

Cmos Process ◽

Gain Bandwidth ◽

Limiting Amplifier ◽

High Oscillation Frequency ◽

Good Energy

This paper presents a low-power, high gain-bandwidth product (GBW) gain cell for gigabits-per-second communications. Based on this gain cell, a large GBW limiting amplifier (LA) and two types of high oscillation-frequency ring oscillators (ROs) are implemented with good energy efficiencies. Fabricated in the 0.18[Formula: see text][Formula: see text]m CMOS process, the proposed LA can support 1.25[Formula: see text]Gbps data-rate with a measured GBW of 338[Formula: see text]GHz under 5[Formula: see text]mW. The proposed single- and multi-loop ROs obtain a simulated typical oscillation frequency of 5.26[Formula: see text]GHz and 6.96[Formula: see text]GHz, respectively, under 6.2 mW, which is less than one-eighth the power consumption of published ROs at similar frequencies in the same process.

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