scholarly journals Silicon-on-insulator (SOI) devices and mixed-signal circuits for extreme temperature applications

2008 ◽  
Author(s):  
Richard Patterson ◽  
Ahmad Hammoud ◽  
Malik Elbuluk
Keyword(s):  
Extreme Temperature ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Mixed Signal Circuits ◽  
Soi Devices ◽  
Temperature Applications

The advancement of silicon-on-insulator (SOI) devices and their basic properties

2020 ◽  
Vol 23 (3) ◽  
pp. 227-252
Author(s):  
T.E. Rudenko ◽  
◽  
A.N. Nazarov ◽  
V.S. Lysenko ◽  
◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Basic Properties ◽  
Soi Devices

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

Verification of Analog/Mixed-Signal Circuits Using Symbolic Methods

2008 ◽  
Vol 27 (12) ◽  
pp. 2223-2235 ◽  
Author(s):  
David Walter ◽  
Scott Little ◽  
Chris Myers ◽  
Nicholas Seegmiller ◽  
Tomohiro Yoneda
Keyword(s):  
Mixed Signal ◽  
Mixed Signal Circuits ◽  
Symbolic Methods

Spectral Prediction for Specification-Based Loopback Test of Embedded Mixed-Signal Circuits

2010 ◽  
Vol 26 (1) ◽  
pp. 73-86 ◽  
Author(s):  
Hongjoong Shin ◽  
Joonsung Park ◽  
Jacob A. Abraham
Keyword(s):  
Mixed Signal ◽  
Mixed Signal Circuits
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