Plasma deposited CF polymer films as ultra low k intermetal dielectric, film properties and application

AbstractParylene-N thin films were characterized from the viewpoint of advanced VLSI intermetal dielectric applications. All films were deposited in a prototype production system that included a vacuum chamber, electrostatic cold chuck and a parylene vapor delivery system. Chuck temperatures as low as -30 °C were achieved. The deposition rate was found to be strongly dependent on wafer temperature, increasing dramatically as wafer temperature is reduced. Deposition rate was also strongly dependent on the parylene vapor flow rate and process pressure. These strong dependencies require that extreme care be taken to achieve production worthy repeatability.A number of film properties were measured including; dielectric constant, refractive index, stress, adhesion, conformality, OH-content, metals-content and thermal stability.

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Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

10.31399/asm.cp.istfa2018p0561 ◽

2018 ◽

Author(s):

K. A. Rubin ◽

W. Jolley ◽

Y. Yang

Keyword(s):

Thin Films ◽

Dielectric Film ◽

Dielectric Constants ◽

Dielectric Films ◽

Silicon Substrates ◽

Fem Modeling ◽

Dielectric Thin Films ◽

Microwave Microscopy ◽

Scanning Microwave Microscopy ◽

Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

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Atomic Structure and Optical Properties of Plasma Enhanced Chemical Vapor Deposited SiCOH Low-k Dielectric Film

Optics and Spectroscopy ◽

10.1134/s0030400x21050088 ◽

2021 ◽

Author(s):

V. N. Kruchinin ◽

V. A. Volodin ◽

S. V. Rykhlitskii ◽

V. A. Gritsenko ◽

I. P. Posvirin ◽

...

Keyword(s):

Optical Properties ◽

Atomic Structure ◽

Dielectric Film ◽

Chemical Vapor ◽

Chemical Vapor Deposited ◽

Low K

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Effects of Hydrogen on Electrical and Chemical Properties of Low-k Hydrogen Silsesquioxane as an Intermetal Dielectric for Nonetchback Processes

Electrochemical and Solid-State Letters ◽

10.1149/1.1390847 ◽

1999 ◽

Vol 2 (8) ◽

pp. 390 ◽

Cited By ~ 14

Author(s):

T. C. Chang

Keyword(s):

Chemical Properties ◽

Hydrogen Silsesquioxane ◽

Intermetal Dielectric ◽

Low K ◽

And Chemical Properties

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Extension of U^* to Electro-Static Problem and Its Application to Structural Design for Porous Low-k Dielectric Film

TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A ◽

10.1299/kikaia.75.999 ◽

2009 ◽

Vol 75 (756) ◽

pp. 999-1006 ◽

Cited By ~ 1

Author(s):

Shunsuke MIYAGAWA ◽

Masaki OMIYA ◽

Kunihiro TAKAHASHI

Keyword(s):

Structural Design ◽

Dielectric Film ◽

Static Problem ◽

Low K

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Water diffusion and fracture behavior in nanoporous low-k dielectric film stacks

Journal of Applied Physics ◽

10.1063/1.3187931 ◽

2009 ◽

Vol 106 (3) ◽

pp. 033503 ◽

Cited By ~ 23

Author(s):

Han Li ◽

Ting Y. Tsui ◽

Joost J. Vlassak

Keyword(s):

Fracture Behavior ◽

Dielectric Film ◽

Water Diffusion ◽

Low K

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Study on highly thermostable low‐k polymer films based on fluorene‐containing polyetherimides

Polymer Engineering & Science ◽

10.1002/pen.25792 ◽

2021 ◽

Author(s):

Marius Andrei Olariu ◽

Corneliu Hamciuc ◽

Mihai Asandulesa ◽

Elena Hamciuc ◽

Elena‐Luiza Epure ◽

...

Keyword(s):

Polymer Films ◽

Low K

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Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Coatings ◽

10.3390/coatings10020155 ◽

2020 ◽

Vol 10 (2) ◽

pp. 155

Author(s):

Yi-Lung Cheng ◽

Chih-Yen Lee ◽

Wei-Fan Peng ◽

Giin-Shan Chen ◽

Jau-Shiung Fang

Keyword(s):

Dielectric Film ◽

Alloy Film ◽

Dielectric Films ◽

Low Dielectric Constant ◽

Electrical Characteristics ◽

Sputtering Deposition ◽

Cu Interconnects ◽

Low Dielectric ◽

Reliability Characteristics ◽

Low K

In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 °C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

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