Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs
2020 ◽
Vol 13
(16)
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pp. 1686-1692
2006 ◽
Vol 527-529
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2001 ◽
Vol 228
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pp. 385-389
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2020 ◽
Vol 28
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pp. 1158-1166
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