Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
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AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.
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2020 ◽
Vol 826
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pp. 154126
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2015 ◽
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pp. 032205
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2020 ◽
Vol 46
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pp. 16310-16320
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