Biaxial-textured Titanium Nitride thin films on low-cost, flexible metal substrate as a conductive buffer layer for thin film solar cells

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

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Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer

Applied Sciences ◽

10.3390/app8071195 ◽

2018 ◽

Vol 8 (7) ◽

pp. 1195 ◽

Cited By ~ 1

Author(s):

Yanru Chen ◽

Xianglin Mei ◽

Xiaolin Liu ◽

Bin Wu ◽

Junfeng Yang ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Buffer Layer ◽

High Efficiency ◽

Low Cost ◽

Buffer Layers ◽

Thin Film Solar Cells ◽

Solution Processed ◽

Cdte Nanocrystal ◽

First Time

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.

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CuInSe2 thin film solar cells prepared by low-cost electrodeposition techniques from a non-aqueous bath

RSC Advances ◽

10.1039/c5ra18315d ◽

2015 ◽

Vol 5 (109) ◽

pp. 89635-89643 ◽

Cited By ~ 17

Author(s):

Priyanka U. Londhe ◽

Ashwini B. Rohom ◽

Nandu B. Chaure

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Solar Cell ◽

Low Cost ◽

Cell Structure ◽

Power Conversion ◽

Thin Film Solar Cells ◽

Solar Cell Structure ◽

Cuinse2 Thin Film

Highly crystalline and stoichiometric CIS thin films have been electrodeposited from non-aqueous bath at temperature 130 °C. Superstrate solar cell structure (FTO/CdS/CIS/Au) exhibited 4.5% power conversion efficiency.

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Demonstration of Low-Resistive P-Type Cu4O3 Thin Films by Radio Frequency Sputtering for Low-Cost Thin Film Solar Cells

2019 Compound Semiconductor Week (CSW) ◽

10.1109/iciprm.2019.8819255 ◽

2019 ◽

Author(s):

Md Abdul Majed Patwary ◽

Katsuhiko Saito ◽

Qixin Guo ◽

Tooru Tanaka ◽

Kin Man Yu ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Radio Frequency ◽

Low Cost ◽

Thin Film Solar Cells ◽

Radio Frequency Sputtering ◽

P Type

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Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Coatings ◽

10.3390/coatings10121209 ◽

2020 ◽

Vol 10 (12) ◽

pp. 1209 ◽

Cited By ~ 1

Author(s):

Sara Kim ◽

Nam-Hoon Kim

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Absorption Coefficient ◽

Low Cost ◽

Thin Film Solar Cells ◽

Volatile Components ◽

Impurity Phases ◽

Sputtering Power ◽

Earth Abundant

When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.

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U. S. Polycrystalline Thin Film Solar Cells Program

MRS Proceedings ◽

10.1557/proc-161-193 ◽

1989 ◽

Vol 161 ◽

Author(s):

Harin S. Ullal ◽

Kenneth Zweibel ◽

Richard L. Mitchell

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Low Cost ◽

The United States ◽

Department Of Energy ◽

Thin Film Solar Cells ◽

Polycrystalline Thin Film ◽

Solar Energy Research Institute ◽

The U.S

ABSTRACTThe Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R&D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15% - 20%), low-cost ($50/M2), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2and CdTe with subcontracts to start in Spring 1990.

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