Analysis of Cu(In,Ga) Se2 grading evolution during low deposition temperature co-evaporation process by GD-OES and XPS measurements. Impact on solar cell performances and modelling

2019 ◽  
Author(s):  
Valentin Achard ◽  
Solene Bechu ◽  
Matteo Balestrieri ◽  
Muriel Bouttemy ◽  
Marie Jubault ◽  
...  
Keyword(s):  
Solar Cell ◽  
Deposition Temperature ◽  
Evaporation Process ◽  
Low Deposition Temperature

Study of Gallium Front Grading at Low Deposition Temperature on Polyimide Substrates and Impacts on the Solar Cell Properties

2018 ◽  
Vol 8 (6) ◽  
pp. 1852-1857 ◽  
Author(s):  
Valentin Achard ◽  
Matteo Balestrieri ◽  
Solene Bechu ◽  
Muriel Bouttemy ◽  
Marie Jubault ◽  
...  
Keyword(s):  
Solar Cell ◽  
Deposition Temperature ◽  
Low Deposition Temperature

scholarly journals The physical and optical properties of AZO thin films on teflon substrate at low deposition temperature by spray pyrolysis

2020 ◽  
Vol 18 (3) ◽  
pp. 1222
Author(s):  
Sofea Nabila Hazmin ◽  
F. S. S. Zahid ◽  
N. S. M. Sauki ◽  
M. H. Mamat ◽  
M. N. Amalina
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Deposition Temperature ◽  
Spray Pyrolysis Technique ◽  
Optical Measurements ◽  
Physical Analysis ◽  
X Ray Diffraction ◽  
Visible Reflectance ◽  
Low Deposition Temperature

<span>This paper presents the physical and optical properties of AZO thin films on Teflon substrate at low deposition temperature by spray pyrolysis. In this study, the effect of different process parameters such as spray time and substrate to nozzle distance on the physical and optical characteristic of aluminium doped zinc oxide (AZO) deposited on Teflon substrates was investigated. The AZO thin films were successfully deposited onto Teflon substrate by spray pyrolysis technique at low deposition temperature. The physical analysis by X-ray diffraction (XRD) shows that the deposited Teflon substrate films have a preferred orientation along the direction (100) and (101). Optical measurements were conducted using Jasco/V-670 Ex Uv-Vis-NIR Spectrophotometer model to confirms that in visible ray it is possible to get good reflectance of AZO films with a reflection of 80%. The values of band gaps Eg were calculated from the spectra of UV-Visible reflectance that were vary between 3.06 and 3.14 eV. </span>

Comparison of Doping of Gey Si1-y:H (y>0.95) Films Deposited by Low Frequency PECVD at High (300°C) and Low (160°C) Temperatures

2012 ◽  
Vol 1426 ◽  
pp. 295-299
Author(s):  
Ismael Cosme ◽  
Andrey Kosarev ◽  
Francisco Temoltzi Avila ◽  
Adrian Itzmoyotl
Keyword(s):  
Activation Energy ◽  
Deposition Temperature ◽  
Solid Phase ◽  
Low Frequency ◽  
General Effect ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
High Deposition Temperature ◽  
B Doping ◽  
Low Deposition Temperature

ABSTRACTIn this work we present the results of comparative study n- and p-doping of Ge:H and Ge0.96Si0.04 :H films deposited by LF PECVD at high deposition temperature (HT) Td=300°C and low deposition temperature (LT) Td=160°C. The concentration of boron and phosphorus in solid phase was measured by means of SIMS technique. Such parameters as spectral dependence of absorption coefficient, room temperature conductivity σRT and activation energy Ea for both intrinsic and doped films were obtained. The doping range studied in gas phase was for boron [B]gas= 0 to 0.15% and for phosphorus [P]gas= 0 to 0.2%. In general effect of deposition temperature on P and B doping has been demonstrated. For LT films changes of [P]gas=0.04% to 0.22% resulted in more than 2 orders increasing conductivity and reducing activation energy from Ea=0.28 to 0.16 eV. HT films in the range of [P]gas=0.04% to 0.2% demonstrated saturation of conductivity. HT films showed continuous reducing Ea with increase of [P]gas. In the case of boron doping both HT and LT films had a minimum of conductivity at certain values of [B]gas=0.05% (LT films) and 0.04% (HT films) and related maximums of activation energy Ea(max) at the same doping with Ea(max)=0.47 eV for HT and Ea(max)=0.53 eV for LT films. It suggests a compensation of electron conductivity in un-doped films for low B doping. Further raising [B]gas leads to reducing Ea and the smallest Ea=0.27 eV was obtained at [B]gas=0.18% for HT films and Ea=0.33 eV at [B]gas=0.14% for LH films.

Effect of deposition temperature of a-Si:H layer on the performance of silicon heterojunction solar cell

2019 ◽  
Vol 30 (14) ◽  
pp. 13330-13335 ◽  
Author(s):  
Tianyu Ruan ◽  
Minghao Qu ◽  
Jianqiang Wang ◽  
Yongcai He ◽  
Xixiang Xu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Deposition Temperature ◽  
Heterojunction Solar Cell ◽  
Silicon Heterojunction Solar Cell

Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures

2015 ◽  
Vol 3 (32) ◽  
pp. 8336-8343 ◽  
Author(s):  
Yong-June Choi ◽  
Kyung-Mun Kang ◽  
Hong-Sub Lee ◽  
Hyung-Ho Park
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Chlorine Doping ◽  
Layer Deposition ◽  
Low Deposition Temperature

Chlorine doping in a ZnO matrix to a concentration of 0.65 ± 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140 °C.

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