Potential Induced Degradation Studies with high Temporal Resolution Reveal Changes of Field Effect Passivation States at the Rear Side of Bifacial Silicon Solar Cells

Author(s):  
Kai Sporleder ◽  
Volker Naumann ◽  
Jan Bauer ◽  
Marko Turek ◽  
Christian Hagendorf
2013 ◽  
Vol 7 (8) ◽  
pp. 530-533 ◽  
Author(s):  
James Bullock ◽  
Andrew Thomson ◽  
Andrés Cuevas ◽  
Boris Veith ◽  
Jan Schmidt ◽  
...  

2017 ◽  
Vol 124 ◽  
pp. 680-690 ◽  
Author(s):  
Andreas Lorenz ◽  
Anna Münzer ◽  
Martin Lehner ◽  
Roland Greutmann ◽  
Heinz Brocker ◽  
...  

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).


2013 ◽  
Vol 205-206 ◽  
pp. 346-351 ◽  
Author(s):  
Ruy S. Bonilla ◽  
Christian Reichel ◽  
Martin Hermle ◽  
Peter R. Wilshaw

Effective reduction of front surface carrier recombination is essential for high efficiency silicon solar cells. Dielectric films are normally used to achieve such reduction. They provide a) an efficient passivation of surface recombination and b) an effective anti-reflection layer. The conditions that produce an effective anti-reflection coating are not necessarily the same for efficient passivation, hence both functions are difficult to achieve simultaneously and expensive processing steps are normally required. This can be overcome by enhancing the passivation properties of an anti-reflective film using the electric field effect. Here, we demonstrate that thermally grown silicon dioxide is an efficient passivation layer when chemically treated and electrically charged, and it is stable over a period of ten months. Double layers of SiO2 and SiN also provided stable and efficient passivation for a period of a year when the sample is submitted to a post-charge anneal. Surface recombination velocity upper limits of 9 cm/s and 19 cm/s were inferred for single and double layers respectively on n-type, 5 Ωcm, Cz-Si.


2015 ◽  
Vol 77 ◽  
pp. 599-606 ◽  
Author(s):  
Karin Krauss ◽  
Fabian Fertig ◽  
Dorothee Menzel ◽  
Stefan Rein

2016 ◽  
Author(s):  
Benedikt Bläsi ◽  
Nico Tucher ◽  
Johannes Eisenlohr ◽  
Benjamin G. Lee ◽  
Jan Benick ◽  
...  

2013 ◽  
Vol 3 (3) ◽  
pp. 976-984 ◽  
Author(s):  
Felix Haase ◽  
Sarah Kajari-Schroder ◽  
Udo Romer ◽  
Tobias Neubert ◽  
Jan-Hendrik Petermann ◽  
...  

2013 ◽  
Vol 108 ◽  
pp. 164-169 ◽  
Author(s):  
Benjamin Thaidigsmann ◽  
Christopher Kick ◽  
Andreas Drews ◽  
Florian Clement ◽  
Andreas Wolf ◽  
...  

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