Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 µm inverters chain

2007 ◽  
Author(s):  
D. Truyen ◽  
J. Boch ◽  
B. Sagnes ◽  
J. R. Vaille ◽  
N. Renaud ◽  
...  
Keyword(s):  
Temperature Effect ◽  
Heavy Ion ◽  
Single Event ◽  
Single Event Transients

Impacts of Proton Radiation on Heavy-Ion-Induced Single-Event Transients in 65-nm CMOS Technology

2019 ◽  
Vol 66 (1) ◽  
pp. 177-183
Author(s):  
Zhenyu Wu ◽  
Shuming Chen ◽  
Jianjun Chen ◽  
Pengcheng Huang
Keyword(s):  
Cmos Technology ◽  
Heavy Ion ◽  
Proton Radiation ◽  
Single Event ◽  
Single Event Transients

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Khushwant Sehra ◽  
Vandana Kumari ◽  
Mridula Gupta ◽  
Meena Mishra ◽  
D. S. Rawal ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Single Event ◽  
Single Event Transients ◽  
Gan Hemts

High energy heavy-ion-induced single event transients in epitaxial structures

1994 ◽  
Vol 41 (6) ◽  
pp. 2018-2025 ◽  
Author(s):  
H. Dussault ◽  
J.W. Howard ◽  
R.C. Block ◽  
M.R. Pinto ◽  
W.J. Stapor ◽  
...  
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Single Event ◽  
Single Event Transients

Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $\mu$m Inverter Chain

2008 ◽  
Vol 55 (4) ◽  
pp. 2001-2006 ◽  
Author(s):  
D. Truyen ◽  
J. Boch ◽  
B. Sagnes ◽  
J.-R. Vaille ◽  
N. Renaud ◽  
...  
Keyword(s):  
Temperature Effect ◽  
Heavy Ion ◽  
Single Event ◽  
Single Event Transient

scholarly journals Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

2019 ◽  
Vol 66 (1) ◽  
pp. 359-367 ◽  
Author(s):  
Adrian Ildefonso ◽  
Zachary E. Fleetwood ◽  
George N. Tzintzarov ◽  
Joel M. Hales ◽  
Delgermaa Nergui ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Optical Parameters ◽  
Single Event ◽  
Single Event Transients

scholarly journals Single event transients monitoring and diagnostic in FPGA

2018 ◽  
Vol 31 (3) ◽  
pp. 401-410
Author(s):  
Georgy Sorokoumov
Keyword(s):  
Heavy Ion ◽  
Laser Source ◽  
Single Event ◽  
Heavy Charged Particles ◽  
Gate Arrays ◽  
Single Event Transients ◽  
Ion Accelerator ◽  
Field Programmable ◽  
Programmable Gate Arrays ◽  
Schematic Circuit

Analysis of single event transients (SETs) generated in field programmable gate arrays (FPGA) under heavy charged particles (HCP) irradiation and SET suppression methods is performed. The circuit for FPGA SET detection is designed for transients generated both inside FPGA and outside at package pin level. SET registration inside FPGA is carried out as an event when logical cell is switched. The SET control schematic circuit efficiency has been comparatively verified using heavy ion accelerator and picosecond focused laser source. SET in FPGA experimental results are presented and discussed.

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