High energy heavy-ion-induced single event transients in epitaxial structures

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

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SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electronics ◽

10.3390/electronics8121531 ◽

2019 ◽

Vol 8 (12) ◽

pp. 1531 ◽

Cited By ~ 1

Author(s):

Chang Cai ◽

Shuai Gao ◽

Peixiong Zhao ◽

Jian Yu ◽

Kai Zhao ◽

...

Keyword(s):

Integrated Circuits ◽

Cross Sections ◽

Radiation Effects ◽

Large Scale ◽

Random Access ◽

Radiation Sensitivity ◽

Heavy Ion ◽

High Energy ◽

Radiation Environment ◽

Single Event

Radiation effects can induce severe and diverse soft errors in digital circuits and systems. A Xilinx commercial 16 nm FinFET static random-access memory (SRAM)-based field-programmable gate array (FPGA) was selected to evaluate the radiation sensitivity and promote the space application of FinFET ultra large-scale integrated circuits (ULSI). Picosecond pulsed laser and high energy heavy ions were employed for irradiation. Before the tests, SRAM-based configure RAMs (CRAMs) were initialized and configured. The 100% embedded block RAMs (BRAMs) were utilized based on the Vivado implementation of the compiled hardware description language. No hard error was observed in both the laser and heavy-ion test. The thresholds for laser-induced single event upset (SEU) were ~3.5 nJ, and the SEU cross-sections were correlated positively to the laser’s energy. Multi-bit upsets were measured in heavy-ion and high-energy laser irradiation. Moreover, latch-up and functional interrupt phenomena were common, especially in the heavy-ion tests. The single event effect results for the 16 nm FinFET process were significant, and some radiation tolerance strategies were required in a radiation environment.

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Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 µm inverters chain

2007 9th European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2007.5205575 ◽

2007 ◽

Cited By ~ 1

Author(s):

D. Truyen ◽

J. Boch ◽

B. Sagnes ◽

J. R. Vaille ◽

N. Renaud ◽

...

Keyword(s):

Temperature Effect ◽

Heavy Ion ◽

Single Event ◽

Single Event Transients

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Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain

Symmetry ◽

10.3390/sym12040624 ◽

2020 ◽

Vol 12 (4) ◽

pp. 624

Author(s):

Anquan Wu ◽

Bin Liang ◽

Yaqing Chi ◽

Zhenyu Wu

Keyword(s):

Integrated Circuits ◽

Heavy Ions ◽

Heavy Ion ◽

High Energy ◽

Advanced Technology ◽

Sensitive Volume ◽

Single Event ◽

Space Applications ◽

Order Of Magnitude ◽

28 Nm

The reliability of integrated circuits under advanced process nodes is facing more severe challenges. Single-event transients (SET) are an important cause of soft errors in space applications. The SET caused by heavy ions in the 28 nm bulk silicon inverter chains was studied. A test chip with good symmetry layout design was fabricated based on the 28 nm process, and the chip was struck by using 5 kinds of heavy ions with different linear energy transfer (LET) values on heavy-ion accelerator. The research results show that in advanced technology, smaller sensitive volume makes SET cross-section measured at 28 nm smaller than 65 nm by an order of magnitude, the lower critical charge required to generate SET will increase the reliability threat of low-energy ions to the circuit, and high-energy ions are more likely to cause single-event multiple transient (SEMT), which cannot be ignored in practical circuits. The transients pulse width data can be used as a reference for SET modeling in complex circuits.

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