Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and NOR Gates

2009 ◽  
Vol 56 (6) ◽  
pp. 3511-3518 ◽  
Author(s):  
Ethan H. Cannon ◽  
Manuel Cabanas-Holmen
Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.


2017 ◽  
Vol 60 (12) ◽  
Author(s):  
Jiaqi Liu ◽  
Yuanfu Zhao ◽  
Liang Wang ◽  
Dan Wang ◽  
Hongchao Zheng ◽  
...  

1994 ◽  
Vol 41 (6) ◽  
pp. 2018-2025 ◽  
Author(s):  
H. Dussault ◽  
J.W. Howard ◽  
R.C. Block ◽  
M.R. Pinto ◽  
W.J. Stapor ◽  
...  

2000 ◽  
Vol 471 (4) ◽  
pp. 339-345 ◽  
Author(s):  
R. Coniglione ◽  
P. Sapienza ◽  
E. Migneco ◽  
C. Agodi ◽  
R. Alba ◽  
...  

Author(s):  
Jun-Hyeok Lee ◽  
Dong-Seok Kim ◽  
Jeong-Gil Kim ◽  
Woo-Hyun Ahn ◽  
Youngho Bae ◽  
...  

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