Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides

1999 ◽  
Vol 14 (10) ◽  
pp. 892-896 ◽  
Author(s):  
M Houssa ◽  
P W Mertens ◽  
M M Heyns
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Gate Oxides ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

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