Comparative Analysis of Negative Capacitance Junctionless and Inversion Mode Transistors for Low Power Applications

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320675 ◽

2019 ◽

Author(s):

Manish Gupta ◽

Vita Pi-Ho Hu

Keyword(s):

Comparative Analysis ◽

Low Power ◽

Negative Capacitance ◽

Inversion Mode ◽

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Comparison of ultra low power junctionless and inversion-mode FinFETs with compact model

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2016.7785246 ◽

2016 ◽

Author(s):

Zebang Guo ◽

Yan Wang

Keyword(s):

Low Power ◽

Compact Model ◽

Ultra Low Power ◽

Inversion Mode ◽

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Comparative Analysis of PBTI Induced Device Degradation in Junctionless and Inversion Mode Multiple-Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2013.17.1.151 ◽

2013 ◽

Vol 17 (1) ◽

pp. 151-157

Author(s):

Jin-Su Kim ◽

Jin-Woo Hong ◽

Hye-Mi Kim ◽

Jae-Ki Lee ◽

Jong-Tae Park

Keyword(s):

Comparative Analysis ◽

Inversion Mode ◽

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Comparison of Low Power Junctionless and Inversion-Mode FinFETs

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2016.5836 ◽

2016 ◽

Vol 13 (12) ◽

pp. 9300-9302

Author(s):

Zebang Guo

Keyword(s):

Low Power ◽

Inversion Mode ◽

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Comparative analysis of the accumulation and inversion mode silicon nanowire transistors for an assessment of their biosensing potential

10.1109/iceet53442.2021.9659715 ◽

2021 ◽

Author(s):

Nawshad Ahmed Chowdhury ◽

Mohammad Mojammel Al Hakim

Keyword(s):

Comparative Analysis ◽

Silicon Nanowire ◽

Inversion Mode ◽

Nanowire Transistors ◽

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Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s.2017.8308749 ◽

2017 ◽

Author(s):

R. T. Doria ◽

R. Trevisoli ◽

M. de Souza ◽

M.A. Pavanello ◽

M. Vinet ◽

...

Keyword(s):

Comparative Analysis ◽

Inversion Mode ◽

Nanowire Transistors ◽

Channel Lengths ◽

Long Channel ◽

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Accumulation-mode and inversion-mode triple-gate MOSFETs

China-Ireland International Conference on Information and Communications Technologies (CIICT 2008) ◽

10.1049/cp:20080883 ◽

2008 ◽

Author(s):

R. Yan ◽

A. Afzalian ◽

C.-W. Lee ◽

D.N. Akhavan ◽

W. Xiong ◽

...

Keyword(s):

Inversion Mode ◽

Accumulation Mode ◽

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Comparative analysis of complete chloroplast genome sequence and inversion variation in Lasthenia burkei (Madieae, Asteraceae)

American Journal of Botany ◽

10.3732/ajb.1400049 ◽

2014 ◽

Vol 101 (4) ◽

pp. 722-729 ◽

Author(s):

Joseph F. Walker ◽

Michael J. Zanis ◽

Nancy C. Emery

Keyword(s):

Comparative Analysis ◽

Chloroplast Genome ◽

Genome Sequence ◽

Complete Chloroplast Genome ◽

Chloroplast Genome Sequence ◽

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Comparative Study of Doublet OTA Circuit Topologies Operating in Weak Inversion Mode for Low Power Analog IC Applications

2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) ◽

10.1109/vlsidcs47293.2020.9179858 ◽

2020 ◽

Author(s):

Rishov Aditya ◽

Saheli Sarkel ◽

Soumya Pandit

Keyword(s):

Comparative Study ◽

Low Power ◽

Weak Inversion ◽

Inversion Mode ◽

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Reduction of Variability in Junctionless and Inversion-Mode FinFETs by Stringer Gate Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2786238 ◽

2018 ◽

Vol 65 (2) ◽

pp. 470-475 ◽

Author(s):

Jungsik Kim ◽

Jin-Woo Han ◽

M. Meyyappan

Keyword(s):

Inversion Mode ◽

Gate Structure ◽

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(Invited) Ferroelectric Oxides and Negative Capacitance for Ultra-low Power Computing

ECS Meeting Abstracts ◽

10.1149/ma2018-02/16/697 ◽

2018 ◽

Keyword(s):

Low Power ◽

Negative Capacitance ◽

Ultra Low Power ◽

Low Power Computing ◽

Ferroelectric Oxides

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