Comparative analysis of the accumulation and inversion mode silicon nanowire transistors for an assessment of their biosensing potential

Mapping Intimacies ◽

10.1109/iceet53442.2021.9659715 ◽

2021 ◽

Author(s):

Nawshad Ahmed Chowdhury ◽

Mohammad Mojammel Al Hakim

Keyword(s):

Comparative Analysis ◽

Silicon Nanowire ◽

Inversion Mode ◽

Nanowire Transistors ◽

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Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s.2017.8308749 ◽

2017 ◽

Author(s):

R. T. Doria ◽

R. Trevisoli ◽

M. de Souza ◽

M.A. Pavanello ◽

M. Vinet ◽

...

Keyword(s):

Comparative Analysis ◽

Inversion Mode ◽

Nanowire Transistors ◽

Channel Lengths ◽

Long Channel ◽

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Comparative experimental study of junctionless and inversion-mode nanowire transistors for analog applications

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vlsi-tsa48913.2020.9203690 ◽

2020 ◽

Author(s):

D. Bosch ◽

J.P. Colinge ◽

J. Lugo ◽

A. Tataridou ◽

C. Theodorou ◽

...

Keyword(s):

Experimental Study ◽

Inversion Mode ◽

Nanowire Transistors ◽

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Comparative Analysis of PBTI Induced Device Degradation in Junctionless and Inversion Mode Multiple-Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2013.17.1.151 ◽

2013 ◽

Vol 17 (1) ◽

pp. 151-157

Author(s):

Jin-Su Kim ◽

Jin-Woo Hong ◽

Hye-Mi Kim ◽

Jae-Ki Lee ◽

Jong-Tae Park

Keyword(s):

Comparative Analysis ◽

Inversion Mode ◽

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Investigation of Sensor Performance in Accumulation- and Inversion-Mode Silicon Nanowire pH Sensors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2312413 ◽

2014 ◽

Vol 61 (5) ◽

pp. 1607-1610 ◽

Author(s):

Jieun Lee ◽

Bongsik Choi ◽

Seonwook Hwang ◽

Jung Han Lee ◽

Byung-Gook Park ◽

...

Keyword(s):

Silicon Nanowire ◽

Inversion Mode ◽

Sensor Performance ◽

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Comparative Analysis of Negative Capacitance Junctionless and Inversion Mode Transistors for Low Power Applications

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320675 ◽

2019 ◽

Author(s):

Manish Gupta ◽

Vita Pi-Ho Hu

Keyword(s):

Comparative Analysis ◽

Low Power ◽

Negative Capacitance ◽

Inversion Mode ◽

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Effects of Work-function Variation on Performance of Junctionless and Inversion-mode Dual-metal Gate Nanowire Transistors

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2020.20.4.349 ◽

2020 ◽

Vol 20 (4) ◽

pp. 349-356

Author(s):

Liang Dai ◽

Weifeng Lü ◽

Mi Lin

Keyword(s):

Work Function ◽

Inversion Mode ◽

Nanowire Transistors ◽

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Accumulation-mode and inversion-mode triple-gate MOSFETs

China-Ireland International Conference on Information and Communications Technologies (CIICT 2008) ◽

10.1049/cp:20080883 ◽

2008 ◽

Author(s):

R. Yan ◽

A. Afzalian ◽

C.-W. Lee ◽

D.N. Akhavan ◽

W. Xiong ◽

...

Keyword(s):

Inversion Mode ◽

Accumulation Mode ◽

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Comparative analysis of complete chloroplast genome sequence and inversion variation in Lasthenia burkei (Madieae, Asteraceae)

American Journal of Botany ◽

10.3732/ajb.1400049 ◽

2014 ◽

Vol 101 (4) ◽

pp. 722-729 ◽

Author(s):

Joseph F. Walker ◽

Michael J. Zanis ◽

Nancy C. Emery

Keyword(s):

Comparative Analysis ◽

Chloroplast Genome ◽

Genome Sequence ◽

Complete Chloroplast Genome ◽

Chloroplast Genome Sequence ◽

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Non-Faradaic Electrical Impedimetric Investigation of the Interfacial Effects of Neuronal Cell Growth and Differentiation on Silicon Nanowire Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b01878 ◽

2015 ◽

Vol 7 (18) ◽

pp. 9866-9878 ◽

Author(s):

Shu-Ping Lin ◽

Lester U. Vinzons ◽

Yu-Shan Kang ◽

Tung-Yen Lai

Keyword(s):

Cell Growth ◽

Silicon Nanowire ◽

Neuronal Cell ◽

Interfacial Effects ◽

Nanowire Transistors ◽

Cell Growth And Differentiation

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Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Physical Review B ◽

10.1103/physrevb.80.155430 ◽

2009 ◽

Vol 80 (15) ◽

Author(s):

Mathieu Luisier ◽

Gerhard Klimeck

Keyword(s):

Phonon Scattering ◽

Silicon Nanowire ◽

Nanowire Transistors ◽

Full Band ◽

Electron Phonon Scattering

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