A Silicon Carbide Capacitive Pressure Sensor for High Temperature and Harsh Environment Applications

2007 ◽  
Author(s):  
Li Chen ◽  
Mehran Mehregany
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Pressure Sensor ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor

Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

2013 ◽  
Vol 562-565 ◽  
pp. 471-476 ◽  
Author(s):  
Hao Jie Lv ◽  
Tao Geng ◽  
Guo Qing Hu
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Sandwich Structure ◽  
High Sensitivity ◽  
High Accuracy ◽  
External Pressure ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor ◽  
Technical Process ◽  
Higher Temperature

In the paper, a touch mode capacitive pressure sensor with double-notches structure is presented. The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in hash environment such as high-temperature. The analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has high sensitivity and long linear range simultaneously. In addition, the technical process of the sensor has been designed in detail in the paper. The research shows that the sensor packaged in a high-temperature ceramic AlN can withstand higher temperature. Consequently, the sensor can be applied in high-temperature and harsh environment.

High-Temperature Capacitive Mode Pressure Sensor Based on SiC

2012 ◽  
Vol 605-607 ◽  
pp. 1440-1443
Author(s):  
Hui Yong Yu ◽  
Hao Jie Lv ◽  
Wei Zhong Song ◽  
Zhi Bang Yang ◽  
Ming Hua Pang
Keyword(s):  
Finite Element Method ◽  
High Temperature ◽  
Pressure Sensor ◽  
Material Properties ◽  
High Accuracy ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor ◽  
Temperature Environment ◽  
Single Cavity ◽  
High Temperature Environment

In order to realize high-accuracy pressure measurement in harsh environment, a new kind of Double-notches Touch Mode Capacitive Pressure Sensor (DTMCPS) based on SiC material is presented. Through research to material properties of the sensor, the sensor can be applied in high-temperature field. Using Finite Element Method (FEM) to simulate and solve capacitance, the results show that DTMCPS can immensely improve the sensitivity and the linear range of traditional single cavity sensor because of its double notches structure. Consequently, the sensor has outstanding measurement performance in high-temperature environment.

A study of a Silicon Carbide Capacitive Pressure Sensor Applied in Harsh Environment

2012 ◽  
Vol 241-244 ◽  
pp. 984-987
Author(s):  
Hao Jie Lv ◽  
Hui Yong Yu ◽  
Jiang Hua Hou ◽  
Tao Geng
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Simulation Analysis ◽  
External Pressure ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor ◽  
Technical Process ◽  
Temperature Environment ◽  
Higher Temperature ◽  
Higher Sensitivity

In the paper, a Double-notches Touch Mode Capacitive Pressure Sensor (DTMCPS) is presented. The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in high-temperature environment. The simulation analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has higher sensitivity and longer linear range than traditional one. At the same time, the technical process of the sensor has been designed in the paper. The research shows that DTMCPS packaged in a high-temperature ceramic package can withstand higher temperature. Consequently, the sensor can be applied in high-temperature and harsh environment.

Wireless LTCC-based capacitive pressure sensor for harsh environment

2013 ◽  
Vol 197 ◽  
pp. 30-37 ◽  
Author(s):  
Jijun Xiong ◽  
Ying Li ◽  
Yingping Hong ◽  
Binzhen Zhang ◽  
Tianhong Cui ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor

A silicon carbide pressure sensor for harsh environment

2002 ◽  
Author(s):  
Qamar A. Shams ◽  
Seun Kahng ◽  
Michael Mitchell ◽  
Theodore Kuhn
Keyword(s):  
Silicon Carbide ◽  
Pressure Sensor ◽  
Harsh Environment

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

scholarly journals High Reliability of MEMS Packaged Capacitive Pressure Sensor Employing 3C-SiC for High Temperature

2015 ◽  
Vol 68 ◽  
pp. 471-479 ◽  
Author(s):  
Noraini Marsi ◽  
Burhanuddin Yeop Majlis ◽  
Azrul Azlan Hamzah ◽  
Faisal Mohd-Yasin
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
High Reliability ◽  
Capacitive Pressure Sensor
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