Silicon carbide pressure sensor for high temperature and high pressure applications: Influence of substrate material on performance

2011 ◽  
Author(s):  
Sheng Jin ◽  
Srihari Rajgopal ◽  
Mehran Mehregany
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
High Temperature ◽  
Pressure Sensor ◽  
Substrate Material ◽  
Influence Of Substrate

The Design and Simulation of Wide Range Pressure Sensor Based on HTCC for High-Temperature Applications

2014 ◽  
Vol 609-610 ◽  
pp. 1053-1059
Author(s):  
Zhong Ren ◽  
Qiu Lin Tan ◽  
Chen Li ◽  
Tao Luo ◽  
Ting Cai ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Pressure Sensor ◽  
Simulation Analysis ◽  
Zirconia Ceramic ◽  
Passive Measurement ◽  
Series Resonance ◽  
Wide Range ◽  
Spiral Inductors ◽  
Temperature Applications

A wide range pressure sensor is designed based on the theoretical basis of LC series resonance circuit model to realize the wireless passive measurement in the harsh environment, such as high temperature and high pressure. The capacitive pressure sensitive device is devised by the technology of high-temperature co-fired ceramics (HTCC) to form nine density cavities in zirconia ceramic substrates, and thick film technology to print capacitance plates and planar spiral inductors. The theoretical calculation and simulation analysis of the designed sensor are made respectively under high pressure (10MPa) and temperature (600 °C), the results of which verify the feasibility of the design in a wide range of pressure for high-temperature applications, and provide the reliable theory basis for the fabrication of wide range pressure sensor.

scholarly journals Hierarchical network enabled flexible textile pressure sensors with ultra-high sensitivity, ultra-wide linearity and high-temperature resistance

2021 ◽  
Author(s):  
Meiling Jia ◽  
Chenghan Yi ◽  
Yankun Han ◽  
Xin Li ◽  
Guoliang Xu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Pressure Sensor ◽  
High Performance ◽  
Full Range ◽  
Pressure Sensors ◽  
Fiber Surface ◽  
High Sensitivity ◽  
Harsh Environments ◽  
Point To Point

Abstract Thin, lightweight, and flexible textile pressure sensors with the ability to precisely detect the full range of faint pressure (< 100 Pa), low pressure (in the range of KPa) and high pressure (in the range of MPa) are in significant demand to meet the requirements for applications in daily activities and more meaningfully in some harsh environments, such as high temperature and high pressure. However, it is still a major challenge to fulfill these requirements simultaneously in a single pressure sensor. Herein, a high-performance pressure sensor enabled by polyimide fiber fabric with functionalized carbon-nanotube (PI/FCNT) is obtained via a facile electrophoretic deposition (EPD) approach. High-density FCNT is evenly wrapped and chemically bonded to the fiber surface during the EPD process, forming a conductive hierarchical fiber/FCNT matrix. Benefiting from the abundant yet firm contacting points, point-to-point contacting mode, and high elastic modulus of both PI and CNT, the proposed PI/FCNT pressure sensor exhibits ultra-high sensitivity (3.57 MPa− 1), ultra-wide linearity (3.24 MPa), exceptionally broad sensing range (~ 45 MPa), and long-term stability (> 4000 cycles). Furthermore, under a high working temperature of 200 ºC, the proposed sensor device still shows an ultra-high sensitivity of 2.64 MPa− 1 within a wide linear range of 7.2 MPa, attributing to its intrinsic high-temperature-resistant properties of PI and CNT. Thanks to these merits, the proposed PI/FCNT(EPD) pressure sensor could serve as an E-skin device to monitor the human physiological information, precisely detect tiny and extremely high pressure, and can be integrated into an intelligent mechanical hand to detect the contact force under high-temperature (> 300 ºC), endowing it with high applicability in the fields of real-time health monitoring, intelligent robots, and harsh environments.

Operation of Silicon Carbide Integrated Circuits under High Temperature and Pressure

2017 ◽  
Vol 2017 (1) ◽  
pp. 000526-000530
Author(s):  
M. Barlow ◽  
A. M. Francis ◽  
J. Holmes
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Leading Edge ◽  
Limited Information ◽  
High Temperature And Pressure ◽  
Temperature And Pressure

Abstract Silicon carbide integrated circuits have demonstrated the ability to function at temperatures as high as 600 °C for extended periods of time. Many environments where high temperature in-situ electronics are desired also have large pressures as well. While some validation has been done for high pressure environments, limited information on the parametric impact of pressure on SiC integrated circuits is available. This paper takes two leading-edge SiC integrated circuit processes using two different classes of devices (JFET and CMOS), and measures the performance through temperature and pressure variation. Circuit functionality was verified at high temperature (475 °C) as well as high pressure (1700 psig).

scholarly journals An LC Wireless Passive Pressure Sensor Based on Single-Crystal MgO MEMS Processing Technique for High Temperature Applications

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6602
Author(s):  
Pinggang Jia ◽  
Jia Liu ◽  
Jiang Qian ◽  
Qianyu Ren ◽  
Guowen An ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Elevated Temperatures ◽  
Applied Pressure ◽  
Processing Technique ◽  
Substrate Material ◽  
Passive Pressure ◽  
Passive Sensing ◽  
Practical Engineering ◽  
First Time

An LC wireless passive pressure sensor based on a single-crystalline magnesium oxide (MgO) MEMS processing technique is proposed and experimentally demonstrated for applications in environmental conditions of 900 °C. Compared to other high-temperature resistant materials, MgO was selected as the sensor substrate material for the first time in the field of wireless passive sensing because of its ultra-high melting point (2800 °C) and excellent mechanical properties at elevated temperatures. The sensor mainly consists of inductance coils and an embedded sealed cavity. The cavity length decreases with the applied pressure, leading to a monotonic variation in the resonant frequency of the sensor, which can be retrieved wirelessly via a readout antenna. The capacitor cavity was fabricated using a MgO MEMS technique. This MEMS processing technique, including the wet chemical etching and direct bonding process, can improve the operating temperature of the sensor. The experimental results indicate that the proposed sensor can stably operate at an ambient environment of 22–900 °C and 0–700 kPa, and the pressure sensitivity of this sensor at room temperature is 14.52 kHz/kPa. In addition, the sensor with a simple fabrication process shows high potential for practical engineering applications in harsh environments.

scholarly journals Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

2002 ◽  
Vol 34 (3) ◽  
pp. 231-240 ◽  
Author(s):  
M. Vlasova ◽  
M. Kakazey ◽  
J.G. Gonzales-Rodriguez ◽  
G. Dominguez ◽  
Momcilo Ristic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
High Pressure ◽  
High Temperature ◽  
Ir Spectroscopy ◽  
Phase Analysis ◽  
Temperature Treatment ◽  
Silicide Formation ◽  
X Ray ◽  
Chromium Silicide

The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa) is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

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