Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-induced current spectroscopy (PICS)

2005 ◽  
Author(s):  
R. Sung ◽  
M.B. Das
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Deep Level ◽  
Induced Current ◽  
Inp Substrate

Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current

2018 ◽  
Vol 924 ◽  
pp. 935-938
Author(s):  
Khaled Driche ◽  
Hitoshi Umezawa ◽  
Shinya Ohmagari ◽  
Hajime Okumura ◽  
Yoshiaki Mokuno ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Depletion Region ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Effect Transistor ◽  
Lateral Gate ◽  
P Type

Lateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

2021 ◽  
pp. 108079
Author(s):  
Dong-Hyeok Son ◽  
Terirama Thingujam ◽  
Quan Dai ◽  
Jeong-Gil Kim ◽  
Sorin Cristoloveanu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization

Characterization of Three-Terminal Junctions Operated as In-Plane Gated Field-Effect Transistors

2009 ◽  
Vol 56 (2) ◽  
pp. 306-311 ◽  
Author(s):  
Christian R. Muller ◽  
L. Worschech ◽  
S. Hofling ◽  
A. Forchel
Keyword(s):  
Field Effect ◽  
Field Effect Transistors
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