Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current
Keyword(s):
Lateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.
Keyword(s):
1998 ◽
Vol 63-64
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pp. 407-412
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2017 ◽
Vol 11
(1)
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pp. 1770303
Keyword(s):
2004 ◽
Vol 87
(6)
◽
pp. 1153-1156
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