Investigation of 6T SOI SRAM Cell Stability Including Quantum and Gate Direct Tunneling Effects by Three-dimensional Device Simulation

Author(s):  
R. Tanabe ◽  
Y. Tosaka ◽  
Y. Ashizawa ◽  
H. Oka
2014 ◽  
Vol 45 (10) ◽  
pp. 1348-1353
Author(s):  
Elena I. Vătăjelu ◽  
Álvaro Gómez-Pau ◽  
Michel Renovell ◽  
Joan Figueras

2009 ◽  
Vol 44 (2) ◽  
pp. 609-619 ◽  
Author(s):  
Mohammad Sharifkhani ◽  
Manoj Sachdev

1984 ◽  
Author(s):  
Nobuo Sasaki ◽  
Seiichiro Kawamura ◽  
Takashi Iwai ◽  
Motoo Nakano ◽  
Kunihiko Wada ◽  
...  

2008 ◽  
Vol 600-603 ◽  
pp. 1075-1078 ◽  
Author(s):  
Koji Yano ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Akio Takatsuka ◽  
Mitsuo Okamoto ◽  
...  

The turnoff mechanism of SiC buried gate static induction transistors (SiC-BGSITs) were analyzed by three dimensional device simulation. A current crowding occurs in the portion near the channel center away from the gate contact during the initial phase of the turnoff operation, which is resulted from a non-uniform potential distribution through the gate finger with the displacement current flowing there. This increases the turnoff delay time. The impact of source length on the turnoff performance was made clear.


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