Minimum parasitic resistance for ultra-thin SOI MOSFET with high-permittivity gate insulator performed by lateral contact structure

ABSTRACTThe effects of bias-stressing n- and p-channel thin-film transistors, employing thermal silicon dioxide as gate insulator, have been analysed by using different techniques, including field-effect, space-charge photomodulation and photo-induced discharge. Photo-induced discharge experiments have pointed out as parasitic resistance effects can be present in p-channel devices. In order to reduce this problem, thin active layer p-channel devices have been fabricated and, combining these results to those relative to the n-channel transistors, we deduced a predominance of charge injection at low and moderate stress-biases while at high-stress biases modifications in the density of states take place.

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Investigation of ferroelectrics using conventional and in situ electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170669 ◽

1994 ◽

Vol 52 ◽

pp. 586-587

Author(s):

V. Saikumar ◽

H. M. Chan ◽

M. P. Harmer

Keyword(s):

Nonvolatile Memory ◽

Ferroelectric Materials ◽

Gate Insulator ◽

Sensors And Actuators ◽

In Situ Electron Microscopy ◽

Ferroelectric Domains ◽

Domain Boundaries ◽

Domain Interactions ◽

Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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Oxide Field-Effect Transistor with Polymer-Based Gate Insulator

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.207 ◽

2019 ◽

Vol 139 (3) ◽

pp. 207-210

Author(s):

Kohei Fujiwara

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Effect Transistor

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