Characterization of the parasitic bipolar transistor in SOI technology: comparison between direct and indirect triggering techniques

2002 ◽  
Author(s):  
O. Flament ◽  
O. Musseau ◽  
V. Ferlet-Cavrois ◽  
T. Colladant ◽  
J.L. Pelloie ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Soi Technology ◽  
Technology Comparison ◽  
Parasitic Bipolar Transistor

DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor

2005 ◽  
Vol 44 (2) ◽  
pp. 824-827 ◽  
Author(s):  
Shiou-Ying Cheng ◽  
Chun-Yuan Chen ◽  
Ssu-I Fu ◽  
Po-Hsien Lai ◽  
Yan-Ying Tsai ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Dc Characterization

Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAsNpNdouble-heterojunction bipolar transistor structure

2001 ◽  
Vol 90 (9) ◽  
pp. 4565-4569 ◽  
Author(s):  
C. J. Lin ◽  
Y. S. Huang ◽  
N. Y. Li ◽  
P. W. Li ◽  
K. K. Tiong
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Transistor Structure

Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance

1990 ◽  
Vol 56 (13) ◽  
pp. 1278-1280 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
L. Pawlowicz ◽  
T. O’Neill ◽  
M. Hafizi
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor
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