Design of A Multistage Marx Generator topology based on SiC-MOSFET Device for Atomic Probe Tomography Applications

2020 ◽  
Author(s):  
Kambiz TEHRANI ◽  
Yunbi LIU ◽  
Loic ROUSSEAU ◽  
Antoine NORMAND ◽  
Francois VURPILLOT
Keyword(s):  
Marx Generator ◽  
Atomic Probe ◽  
Atomic Probe Tomography

Co-implantation : A simple way to grow doped Si nanocrystals embedded in SiO2

2012 ◽  
Vol 1455 ◽  
Author(s):  
Daniel Mathiot ◽  
Rim Khelifi ◽  
Dominique Muller ◽  
Sébastien Duguay
Keyword(s):  
Spatial Distribution ◽  
Atomic Scale ◽  
Si Nanocrystals ◽  
Dopant Atoms ◽  
Atomic Probe ◽  
Atomic Probe Tomography

ABSTRACTCo-implantation, with overlapping implantation projected ranges, of Si and of the doping species (P, As, or B), followed by a single thermal anneal step, is proved to be a viable route to form doped Si-nc’s embedded in SiO2, with diameters of a few nanometers. Extensive results of the evolution of the Si-nc’s related photoluminescence, as a function of the dopant implanted dose, are presented and discussed. Atomic Probe Tomography (APT) is used to image directly the spatial distribution of the various species at the atomic scale. The 3D APT data demonstrate that n-type dopant atoms (P and As) are efficiently introduced in the "bulk" of the Sinanocrystals, whereas B atoms are preferentially located at their periphery, at the Si/SiO2 interface.

scholarly journals Structural characterization of tin nanocrystals embedded in silicon by atomic probe tomography

2019 ◽  
Vol 6 (6) ◽  
pp. 065005 ◽  
Author(s):  
Søren Roesgaard ◽  
Etienne Talbot ◽  
Constantinos Hatzoglou ◽  
John Lundsgaard Hansen ◽  
Brian Julsgaard
Keyword(s):  
Structural Characterization ◽  
Atomic Probe ◽  
Atomic Probe Tomography

scholarly journals Portable DC Supply Based on SiC Power Devices for High-Voltage Marx Generator

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 313
Author(s):  
Jacek Rąbkowski ◽  
Andrzej Łasica ◽  
Mariusz Zdanowski ◽  
Grzegorz Wrona ◽  
Jacek Starzyński
Keyword(s):  
High Voltage ◽  
Specific Area ◽  
Input Voltage ◽  
Marx Generator ◽  
Power Devices ◽  
Laboratory Setup ◽  
High Voltage Gain ◽  
Main Components ◽  
Two Stages ◽  
Very High

The paper describes major issues related to the design of a portable SiC-based DC supply developed for evaluation of a high-voltage Marx generator. This generator is developed to be a part of an electromagnetic cannon providing very high voltage and current pulses aiming at the destruction of electronics equipment in a specific area. The portable DC supply offers a very high voltage gain: input voltage is 24 V, while the generator requires supply voltages up to 50 kV. Thus, the system contains two stages designed on the basis of SiC power devices operating with frequencies up to 100 kHz. At first, the input voltage is boosted up to 400 V by a non-isolated double-boost converter, and then a resonant DC-DC converter with a special transformer elevates the voltage to the required level. In the paper, the main components of the laboratory setup are presented, and experimental results of the DC supply and whole system are also shown.

Inductive Pulsed-Power Supply With Marx Generator Methodology

2009 ◽  
Vol 45 (1) ◽  
pp. 237-240 ◽  
Author(s):  
Y. Aso ◽  
T. Hashimoto ◽  
T. Abe ◽  
S. Yamada
Keyword(s):  
Power Supply ◽  
Pulsed Power ◽  
Marx Generator ◽  
Pulsed Power Supply

scholarly journals Modular Marx Generator Based on SiC-MOSFET Generating Adjustable Rectangular Pulses

Energies ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3492
Author(s):  
Yahia Achour ◽  
Jacek Starzyński ◽  
Jacek Rąbkowski
Keyword(s):  
Silicon Carbide ◽  
Repetition Rate ◽  
Pulse Width ◽  
Biomedical Applications ◽  
Living Cells ◽  
Marx Generator ◽  
Electrical Field ◽  
Rectangular Shape ◽  
Overall Performance ◽  
Pulsed Electrical Field

The paper introduces a new design of Marx generator based on modular stages using Silicon Carbide MOSFETs (SiC-MOSFET) aimed to be used in biomedical applications. In this process, living cells are treated with intense nanosecond Pulsed Electrical Field (nsPEF). The electric field dose should be controlled by adjusting the pulse parameters such as amplitude, repetition rate and pulse-width. For this purpose, the structure of the proposed generator enables negative pulses with a quasi-rectangular shape, controllable amplitude, pulse-width and repetition-rate. A complete simulation study was conducted in ANSYS-Simplorer to verify the overall performance. A compact, modular prototype of Marx generator was designed with 1.7 kV rated SiC-MOSFETs and, finally, a set of experiments confirmed all expected features.

scholarly journals Research of the anti-resonance pulse forming network and its application in the Marx generator

2016 ◽  
Vol 34 (4) ◽  
pp. 675-686 ◽  
Author(s):  
Z.-L. Pan ◽  
J.-H. Yang ◽  
X.-B. Cheng
Keyword(s):  
Equivalent Circuit ◽  
Rise Time ◽  
Pulse Width ◽  
Marx Generator ◽  
Full Width ◽  
Half Maximum ◽  
Compact Structure ◽  
Fall Time ◽  
Pulse Forming Network ◽  
Load Pulse

AbstractAn anti-resonance pulse forming network (PFN) has been designed, analyzed, and tested for its application in generating quasi-square pulses. According to the circuit simulations, a compact generator based on two/three-section network was constructed. Two-section network is applied in the generator due to its compact structure, while three-section network is employed for generating pulses with higher quality. When two-section network is applied in the generator, the full-width at half-maximum of the load pulse is 400 ns, at the same time, its rise time, flat top and fall time are 90, 180 and 217 ns, respectively. When the three-section network is applied with the same pulse width of the load pulse, the rise time of the output decreases to 60 ns, while the flat top increases to 240 ns and the fall time reduces to 109 ns. Meanwhile, this kind of network could be used to shape the output pulses of generators whose equivalent circuit is LC series discharge network, such as MARX generator, into quasi-square pulses. And the preliminary experiment demonstrates that anti-resonance network could work well on four-stage Marx generators. A sine pulse generated by the four-stage Marx generator is shaped into a quasi-square pulse with voltage of 11.8 kV and pulse width about 110 ns based on two-section anti-resonance network.

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