WA-B8 Double-heterostructure Ga0.47In0.53As MESFET's

1980 ◽  
Vol 27 (11) ◽  
pp. 2198-2198
Author(s):  
H. Ohno ◽  
J. Barnard ◽  
C.E.C. Wood ◽  
L.F. Eastma
Keyword(s):  
Double Heterostructure

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold

Cavity competition in anomalous emission intensity in double-heterostructure (DH) lasers

1977 ◽  
Vol 13 (8) ◽  
pp. 687-691 ◽  
Author(s):  
M. Campos ◽  
C. Hwang ◽  
R. Bossi ◽  
J. Ripper
Keyword(s):  
Emission Intensity ◽  
Double Heterostructure

Degradation in GaAs/AlGaAs double‐heterostructure light‐emitting diodes

1987 ◽  
Vol 51 (23) ◽  
pp. 1949-1950 ◽  
Author(s):  
Junko Ogawa ◽  
Kohshi Tamamura ◽  
Katsuhiro Akimoto ◽  
Yoshifumi Mori
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I

2000 ◽  
Vol 34 (11) ◽  
pp. 1343-1350
Author(s):  
T. N. Danilova ◽  
A. N. Imenkov ◽  
V. V. Sherstnev ◽  
Yu. P. Yakovlev
Keyword(s):  
Double Heterostructure
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