OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients
2012 ◽
Vol 717-720
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pp. 545-548
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Keyword(s):
Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.
1985 ◽
Vol 32
(11)
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pp. 2454-2466
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1986 ◽
Vol 15
(4)
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pp. 221-227
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Keyword(s):
2007 ◽
Vol 556-557
◽
pp. 1007-1010
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Keyword(s):
2020 ◽
Vol 92
(1)
◽
pp. 10301
2018 ◽
Vol 924
◽
pp. 577-580
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