The insulating-gate bipolar transistor, IGBT, is a power component which is developed in the medium power and medium frequency. It inherently integrates the structures of a power bipolar transistor and a power MOSFET, and then it has better performance in many applications. Advantages of this device are the high current density, the outstanding breakdown voltage, as well as the excellent operating frequency and so on. And, it might make up the shortcoming of MOSFETs or BJTs utilized separately. In this paper, a smart IGBT device is developed by using the semiconductor process and device simulation tools. Therefore, a relationship between the depth of drift region, doping concentration, and breakdown voltage in an IGBT will be investigated in this work. Eventually, this device will be with the 200V breakdown voltage and 20A on-state driving current capability. Meanwhile, the ESD and latch-up (LU) protection structures will be accomplished in this study.
