Wide-band characterization of average power handling capabilities of some microstrip interconnects on polyimide and polyimide/GaAs substrates

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2013.12747 ◽

2013 ◽

Vol 28 (6) ◽

pp. 671-676 ◽

Cited By ~ 4

Author(s):

Yu-Qing ZHANG ◽

Li-Li ZHAO ◽

Shi-Long XU ◽

Chao ZHANG ◽

Xiao-Ying CHEN ◽

...

Keyword(s):

Refractive Index ◽

Band Gap ◽

Polyvinylidene Fluoride ◽

Wide Band ◽

High Refractive Index ◽

Wide Band Gap ◽

Optical Film

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Integrated, Multi-Scale Characterization of Imbibition and Wettability Phenomena Using Magnetic Resonance and Wide-Band Dielectric Measurements

10.2172/927607 ◽

2007 ◽

Author(s):

Mukul M. Sharma ◽

Steven L. Bryant ◽

Carlos Torres-Verdin ◽

George Hirasaki

Keyword(s):

Magnetic Resonance ◽

Wide Band ◽

Dielectric Measurements ◽

Multi Scale ◽

Scale Characterization

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RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078721000076 ◽

2021 ◽

pp. 1-6

Author(s):

Frédéric Drillet ◽

Jérôme Loraine ◽

Hassan Saleh ◽

Imene Lahbib ◽

Brice Grandchamp ◽

...

Keyword(s):

Power Level ◽

Coplanar Waveguide ◽

Average Power ◽

Input Power ◽

Capacitive Coupling ◽

Rf Switch ◽

Large Signal ◽

Waveguide Transmission ◽

Signal Characterization

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

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Design of 3.1-10.6GHz CMOS LNA Based on Input Matching Technique of Common-Gate Topology

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.479-480.1014 ◽

2013 ◽

Vol 479-480 ◽

pp. 1014-1017

Author(s):

Yi Cheng Chang ◽

Meng Ting Hsu ◽

Yu Chang Hsieh

Keyword(s):

Noise Figure ◽

Supply Voltage ◽

Average Power ◽

Wide Band ◽

Low Noise ◽

Input Matching ◽

Common Gate ◽

Cmos Lna ◽

Noise Amplifier ◽

Is Design

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

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