Electric field investigations of a compact superconducting three-phase single conductor cable assembly

Author(s):  
Steven Franke ◽  
Andre Schmid ◽  
Christof Humpert ◽  
Markus Klankers ◽  
Wolfgang Reiser ◽  
...  
Author(s):  
Janaki Pakalapati ◽  
Venkata N. Kumar Gundavarapu ◽  
Deepak Chowdary Duvvada ◽  
Sravana Kumar Bali

AbstractNow days, the establishment of spacers is in wide usage in three-phase Gas Insulated Busduct (GIB) for providing mechanical support and better insulation to the conductors. The region of the intersection of SF6 gas, enclosure end and the spacer is one of the weakest links in GIB, so the major concentration is done on minimization of electric field stress at this junction by using Functionally Graded Material (FGM) technique. The other incidents of insulation failures are due to several defects like depression, delamination etc. reduces the dielectric strength of the spacers. In this paper, an FGM post type spacer has been designed for a three-phase GIB under depression and further electric field stress at Triple Junction (TJ) is reduced by introducing a metal insert (MI) nearer to the TJ. Several filler materials are used as doping materials for obtaining different permittivity values using FGM technique to achieve uniform electric field stress. Simulation is carried out for the designed spacer at various operating voltages with different types of FGM gradings. The effect of depression with different dimensions and positions is analyzed before and after inserting MI to the FGM post type spacer in three-phase GIB.


Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1310 ◽  
Author(s):  
James J. Tronolone ◽  
Michael Orrill ◽  
Wonbin Song ◽  
Hyun Soo Kim ◽  
Byung Yang Lee ◽  
...  

Filamentous viruses called M13 bacteriophages are promising materials for devices with thin film coatings because phages are functionalizable, and they can self-assemble into smectic helicoidal nanofilament structures. However, the existing “pulling” approach to align the nanofilaments is slow and limits potential commercialization of this technology. This study uses an applied electric field to rapidly align the nanostructures in a fixed droplet. The electric field reduces pinning of the three-phase contact line, allowing it to recede at a constant rate. Atomic force microscopy reveals that the resulting aligned structures resemble those produced via the pulling method. The field-assisted alignment results in concentric color bands quantified with image analysis of red, green, and blue line profiles. The alignment technique shown here could reduce self-assembly time from hours to minutes and lend itself to scalable manufacturing techniques such as inkjet printing.


2013 ◽  
Vol 291-294 ◽  
pp. 2428-2431
Author(s):  
Hui Lan Jiang ◽  
Kai Zeng ◽  
Jian Min Liu ◽  
Chao Li

In ultra-high voltage transmission system, the electrostatic induction generated by power frequency electric field will exerts negative effects on the electrical automation equipment within the substation and, in particular, will leads long-term harm to staffs’ health. However, researches of electric field environment in ultra-high voltage transmission system merely concentrate on calculating the electric field intensity caused by three-phase limited length wire or three-phase infinite wire within the transmission, without considering the method of calculating half-infinite wire which represents “one end is fixed, while the other end is infinite length’s wire”. Consequently, a new method named “Charge Simulation-Genetic Algorithm (CS-GA) method” which can efficiently calculate power frequency electric field inside of the substation is proposed in the paper. In CS-GA method, the effective calculating length is determined by genetic algorithm method’s optimization, which in other words, half-infinite length wire is substituted for limited length wire in calculating the electric field intensity. The simulation results indicate that CS-GA method is a relatively accurate, efficient and reasonable way on calculating the power frequency electric field inside of the substation.


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