Design, Fabrication, and Characterization of Freestanding Mechanically Flexible Interconnects Using Curved Sacrificial Layer

Author(s):  
Hyung Suk Yang ◽  
Muhannad S. Bakir
2020 ◽  
Vol 32 (2) ◽  
pp. 289-296
Author(s):  
Hideyuki Mitsui ◽  
Hiroshi Kashiwazaki ◽  
Takashi Mineta ◽  
◽  

This paper describes the fabrication and characterization of a prototype wettability switching soft skin device that dynamically switches its surface morphology between flat and rough states. The device, which consists of a 1-μm-thick polydimethylsiloxane (PDMS) deformable diaphragm on a PDMS substrate with a micro-bump arrays, was successfully formed with a high fabrication yield by a novel method of device releasing from a dummy substrate. In buffered hydrofluoric acid (BHF) solution, a sacrificial layer of a novolak-resin-based resist was able to be rapidly released from the OH-terminated SiO2 surface of the dummy substrate, probably due to the breaking of hydrogen bonds at the interface. The wettability of the fabricated device was reversibly switched using micro-diaphragm deformation by varying the inner pressure. When a droplet was placed on the surface in the rough state, a large contact angle of approximately 140° was obtained, close to the Cassie mode with air in the concave-deformed PDMS micro-diaphragms, which indicated a high surface hydrophobicity. During cyclic switching between the rough and flat states after second switching, the contact angle reversibly changed between 106° and 120°, in good agreement with the Wenzel mode, where the micro-diaphragm surfaces were fully wet. Additionally, we observed that the droplet did not move even on the tilted device.


2007 ◽  
Vol 7 (11) ◽  
pp. 4150-4153
Author(s):  
ChangMin Park ◽  
SeHan Lee ◽  
MinSu Choi ◽  
MyungGil Kang ◽  
YoungChai Jung ◽  
...  

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.


Author(s):  
Dongjin Lee ◽  
Tianhong Cui

We report the fabrication and characterization of single-walled carbon nanotube (SWCNT) multilayer micropatterns and suspended micro-beams prepared by layer-by-layer (LbL) assembly. The SWCNT multilayer is etched using oxygen plasma with the masking layer of the photoresist, resulting in the feature size of 2 μm. Furthermore, it is released by etching a sacrificial layer of oxide in the hydrofluoric acid vapor. I-V measurements reveal that the resistance of suspended beams decreases upon release due to the exposed surface, excluding the effects of substrate. A high Young’s modulus has been found on the range of 500–800 GPa due to the deviation of spring constants measured and the variation in thickness of beams. It is much higher than those of the other CNT-polymer composites due to the organized structure. Stiff CNT-polymer composite micropatterns and the suspended micro-beams may have potential applications for novel physical sensors, nano-switches, other M/NEMS devices, etc.


2007 ◽  
Vol 7 (11) ◽  
pp. 4150-4153 ◽  
Author(s):  
ChangMin Park ◽  
SeHan Lee ◽  
MinSu Choi ◽  
MyungGil Kang ◽  
YoungChai Jung ◽  
...  

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150° with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.


2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  

2019 ◽  
Vol 139 (11) ◽  
pp. 375-380
Author(s):  
Harutoshi Takahashi ◽  
Yuta Namba ◽  
Takashi Abe ◽  
Masayuki Sohgawa

2015 ◽  
Vol 135 (11) ◽  
pp. 474-475
Author(s):  
Koji Sugano ◽  
Ryoji Hiraoka ◽  
Toshiyuki Tsuchiya ◽  
Osamu Tabata

Sign in / Sign up

Export Citation Format

Share Document