DC characterization of isoparaffinic insulation oil

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

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DC Characterization of AC Current Shunts for Wideband Power Applications

IEEE Transactions on Instrumentation and Measurement ◽

10.1109/tim.2011.2132230 ◽

2011 ◽

Vol 60 (7) ◽

pp. 2191-2194 ◽

Cited By ~ 5

Author(s):

Gert Rietveld ◽

J. H. N. van der Beek ◽

Ernest Houtzager

Keyword(s):

Ac Current ◽

Dc Characterization

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DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.824 ◽

2005 ◽

Vol 44 (2) ◽

pp. 824-827 ◽

Cited By ~ 1

Author(s):

Shiou-Ying Cheng ◽

Chun-Yuan Chen ◽

Ssu-I Fu ◽

Po-Hsien Lai ◽

Yan-Ying Tsai ◽

...

Keyword(s):

Bipolar Transistor ◽

Dc Characterization

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EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156411006714 ◽

2011 ◽

Vol 20 (03) ◽

pp. 423-430

Author(s):

DIEGO GUERRA ◽

FABIO ALESSIO MARINO ◽

STEPHEN GOODNICK ◽

DAVID FERRY ◽

MARCO SARANITI

Keyword(s):

Monte Carlo ◽

High Power ◽

High Frequency ◽

Small Signal ◽

Small Signal Analysis ◽

Gan Hemt ◽

Full Band ◽

Cellular Monte Carlo ◽

Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

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