Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures

2011 ◽  
Vol 11 (1) ◽  
pp. 179-186 ◽  
Author(s):  
Matthew J. Gadlage ◽  
Jonathan R. Ahlbin ◽  
Balaji Narasimham ◽  
Bharat L. Bhuva ◽  
Lloyd W. Massengill ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Cmos Technology ◽  
Single Event ◽  
Single Event Transient ◽  
Transient Measurements

Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology

2011 ◽  
Vol 58 (3) ◽  
pp. 1093-1097 ◽  
Author(s):  
Matthew J. Gadlage ◽  
Jonathan R. Ahlbin ◽  
Bharat L. Bhuva ◽  
Nicholas C. Hooten ◽  
Nathaniel A. Dodds ◽  
...  
Keyword(s):  
Alpha Particle ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cmos Technology ◽  
Single Event ◽  
Single Event Transient ◽  
Transient Measurements

Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures

2010 ◽  
Vol 10 (1) ◽  
pp. 157-163 ◽  
Author(s):  
M.J. Gadlage ◽  
J.R. Ahlbin ◽  
B. Narasimham ◽  
V. Ramachandran ◽  
C.A. Dinkins ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Cmos Technology ◽  
Single Event ◽  
Single Event Transient

Research on single event transient pulse quenching effect in 90 nm CMOS technology

2011 ◽  
Vol 54 (11) ◽  
pp. 3064-3069 ◽  
Author(s):  
JunRui Qin ◽  
ShuMing Chen ◽  
BiWei Liu ◽  
JianJun Chen ◽  
Bin Liang ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Single Event ◽  
Single Event Transient ◽  
Quenching Effect

scholarly journals Bulk Bias as an Analog Single-Event Transient Mitigation Technique with Negligible Penalty

Electronics ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 27
Author(s):  
Jingtian Liu ◽  
Qian Sun ◽  
Bin Liang ◽  
Jianjun Chen ◽  
Yaqing Chi ◽  
...  
Keyword(s):  
Circuit Design ◽  
Analog Circuits ◽  
Analog Circuit ◽  
Forward Bias ◽  
Cmos Technology ◽  
Common Source ◽  
Single Event ◽  
Single Event Transient ◽  
Body Effect ◽  
Radiation Hardened

In analog circuit design, the bulks of MOSFETs can be tied to their respective sources to remove body effect. This paper models and analyzes the sensitivity of single-event transients (SETs) in common source (CS) amplifier with bulk tied to source (BTS) in 40 nm twin-well bulk CMOS technology. The simulation results present that the proposed BTS radiation-hardened-by-design (RHBD) technique can reduce charge collection and suppress the SET induced perturbation effectively in various input conditions of the circuit. The detailed analysis shows that the mitigation of SET is primarily due to the forward-bias of bulk potential. This technique is universally applicable in radiation-hardening design for analog circuits with negligible penalty.

Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology

2008 ◽  
Vol 29 (6) ◽  
pp. 638-640 ◽  
Author(s):  
Matthew J. Gadlage ◽  
Ronald D. Schrimpf ◽  
Balaji Narasimham ◽  
Jonathan A. Pellish ◽  
Kevin M. Warren ◽  
...  
Keyword(s):  
Alpha Particle ◽  
Cmos Technology ◽  
Single Event ◽  
Single Event Transient
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