Monte carlo simulation of threshold bandwidth for high-order harmonic extraction

2003 ◽  
Vol 50 (5) ◽  
pp. 1171-1178 ◽  
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gruzinskis ◽  
S. Perez ◽  
T. Gonzlez ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Order ◽  
High Order Harmonic ◽  
Harmonic Extraction

Monte Carlo investigation of noise and high-order harmonic extraction in graphene

2018 ◽  
Vol 33 (12) ◽  
pp. 124012 ◽  
Author(s):  
José Manuel Iglesias ◽  
El Mokhtar Hamham ◽  
Elena Pascual ◽  
Raúl Rengel
Keyword(s):  
Monte Carlo ◽  
High Order ◽  
High Order Harmonic ◽  
Monte Carlo Investigation ◽  
Harmonic Extraction

scholarly journals Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5108
Author(s):  
Elena Pascual ◽  
José M. Iglesias ◽  
María J. Martín ◽  
Raúl Rengel
Keyword(s):  
Monte Carlo ◽  
Electric Fields ◽  
Strong Field ◽  
Monte Carlo Analysis ◽  
High Order ◽  
Harmonic Intensity ◽  
Ensemble Monte Carlo ◽  
Ac Electric Fields ◽  
High Order Harmonic ◽  
Harmonic Extraction

Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory electric fields to analyse the response of the carriers in order to explore the generation of terahertz radiation by means of high-order harmonic extraction. The properties of the ensemble Monte Carlo simulator employed for such study have allowed us to evaluate the high-order harmonic intensity and the spectral density of velocity fluctuations under different amplitudes of the periodic electric field, proving that strong field conditions are preferable for the established goal. Furthermore, by comparison of both harmonic intensity and noise level, the threshold bandwidth for harmonic extraction has been determined. The results have shown that graphene on h-BN presents the best featuring of the cases under analysis and that in comparison to III–V semiconductors, it is a very good option for high-order harmonic extraction under AC electric fields with large amplitudes.

MONTE CARLO SIMULATION OF TEMPERATURE-PROGRAMMED DESORPTION CO/Cu(110) AND CO2/Cu(100) SYSTEMS

2004 ◽  
Vol 11 (02) ◽  
pp. 137-143 ◽  
Author(s):  
KH. ZAKERI ◽  
A. DASHTI
Keyword(s):  
Activation Energy ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Excellent Agreement ◽  
Temperature Programmed Desorption ◽  
High Order ◽  
Kinetics And Mechanism ◽  
Lateral Interaction ◽  
Desorption Rate ◽  
Temperature Programmed

In this investigation, we have studied the kinetics and mechanism of desorption of CO from the Cu (110) surface using a new Monte Carlo simulation and putting emphasis on high order lateral interaction. According to our simulated TPD spectra, for β=10 K/s the maximum desorption rate occurs at Tm=218.6 K. Furthermore, analysis of simulated TPD spectra of CO desorption shows that it is strongly lateral-interactive and results an activation energy of CO desorption from Cu (110) that is Ed=66.6 Kj/mol. These simulated results are compared with other reported results and show excellent agreement. After that we have investigated the kinetics and mechanism of desorption of CO 2 from the Cu (100) surface using a Monte Carlo simulation. According to our simulated TPD spectra, for β=0.5 K/s the maximum desorption rate occurs at Tm=89.7 K. Analysis of simulated TPD spectra of CO 2 desorption shows that it is not strongly lateral-interactive and results in an activation energy of CO desorption from Cu (100) that is Ed=25.2 Kj/mol. Finally, the CO / Cu (110) system is compared with the CO 2/ Cu (100) system.

Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures

2004 ◽  
Vol 1 (6) ◽  
pp. 1367-1376 ◽  
Author(s):  
D. Persano Adorno ◽  
M. Zarcone ◽  
G. Ferrante ◽  
P. Shiktorov ◽  
E. Starikov ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Order ◽  
Bulk Semiconductors ◽  
Submicron Structures ◽  
Harmonics Generation

Monte Carlo calculation of electronic noise under high-order harmonic generation

2002 ◽  
Vol 80 (25) ◽  
pp. 4759-4761 ◽  
Author(s):  
P. Shiktorov ◽  
E. Starikov ◽  
V. Gružinskis ◽  
L. Reggiani ◽  
L. Varani ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Harmonic Generation ◽  
Monte Carlo Calculation ◽  
High Order ◽  
Electronic Noise ◽  
High Order Harmonic Generation ◽  
High Order Harmonic

scholarly journals Global Monte Carlo Simulation with High Order Polynomial Expansions

2007 ◽  
Author(s):  
William R Martin ◽  
James Paul Holloway ◽  
Kaushik Banerjee ◽  
Jesse Cheatham ◽  
Jeremy Conlin
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Order ◽  
Order Polynomial ◽  
Polynomial Expansions

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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