Full-Band Tunneling in High-$\kappa$ Oxide MOS Structures

2007 ◽  
Vol 54 (12) ◽  
pp. 3168-3176 ◽  
Author(s):  
Fabio Sacconi ◽  
Jean Marc Jancu ◽  
Michael Povolotskyi ◽  
Aldo Di Carlo
Keyword(s):  
Full Band ◽  
Mos Structures

Full-band approaches to the electronic properties of nanometer-scale MOS structures

2004 ◽  
Vol 48 (4) ◽  
pp. 575-580 ◽  
Author(s):  
Fabio Sacconi ◽  
Michael Povolotskyi ◽  
Aldo Di Carlo ◽  
Paolo Lugli ◽  
Martin Städele
Keyword(s):  
Electronic Properties ◽  
Nanometer Scale ◽  
Full Band ◽  
Mos Structures

Full-band approaches for the quantum treatment of nanometer-scale MOS structures

2002 ◽  
Vol 314 (1-4) ◽  
pp. 345-349 ◽  
Author(s):  
Fabio Sacconi ◽  
Michael Povolotskyi ◽  
Aldo Di Carlo ◽  
Paolo Lugli ◽  
Martin Städele ◽  
...  
Keyword(s):  
Nanometer Scale ◽  
Full Band ◽  
Mos Structures ◽  
Quantum Treatment

Full band approach to tunneling in MOS structures

2004 ◽  
Vol 51 (5) ◽  
pp. 741-748 ◽  
Author(s):  
F. Sacconi ◽  
A. Di Carlo ◽  
P. Lugli ◽  
M. Stadele ◽  
J.-M. Jancu
Keyword(s):  
Full Band ◽  
Mos Structures

Full-band tunneling in high-κ dielectric MOS structures

2007 ◽  
Vol 47 (4-5) ◽  
pp. 694-696 ◽  
Author(s):  
F. Sacconi ◽  
J.M. Jancu ◽  
M. Povolotskyi ◽  
A. Di Carlo
Keyword(s):  
Full Band ◽  
Mos Structures

Full-Band Tunneling Currents in Nanometer-Scale MOS Structures

2003 ◽  
Vol 2 (2-4) ◽  
pp. 439-442
Author(s):  
F. Sacconi ◽  
A. Di Carlo ◽  
P. Lugli ◽  
M. Städele
Keyword(s):  
Nanometer Scale ◽  
Full Band ◽  
Tunneling Currents ◽  
Mos Structures

scholarly journals Hybrid Particle-based Full-band Analysis of Ultra-small MOS

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 125-129
Author(s):  
S. J. Wigger ◽  
S. M. Goodnick ◽  
M. Saraniti
Keyword(s):  
Hybrid Approach ◽  
Simulation Tool ◽  
Ensemble Monte Carlo ◽  
Poisson Solver ◽  
Simulation Engine ◽  
Novel Approach ◽  
Full Band ◽  
Charge Concentration ◽  
2D And 3D ◽  
Mos Structures

We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.

scholarly journals Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials

2020 ◽  
Vol 67 (12) ◽  
pp. 5662-5668
Author(s):  
Adel M'foukh ◽  
Marco G. Pala ◽  
David Esseni
Keyword(s):  
Quantum Transport ◽  
Full Band ◽  
Electron Devices
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