Full-band approaches for the quantum treatment of nanometer-scale MOS structures

2002 ◽  
Vol 314 (1-4) ◽  
pp. 345-349 ◽  
Author(s):  
Fabio Sacconi ◽  
Michael Povolotskyi ◽  
Aldo Di Carlo ◽  
Paolo Lugli ◽  
Martin Städele ◽  
...  
2004 ◽  
Vol 48 (4) ◽  
pp. 575-580 ◽  
Author(s):  
Fabio Sacconi ◽  
Michael Povolotskyi ◽  
Aldo Di Carlo ◽  
Paolo Lugli ◽  
Martin Städele

2003 ◽  
Vol 2 (2-4) ◽  
pp. 439-442
Author(s):  
F. Sacconi ◽  
A. Di Carlo ◽  
P. Lugli ◽  
M. Städele

2007 ◽  
Vol 54 (12) ◽  
pp. 3168-3176 ◽  
Author(s):  
Fabio Sacconi ◽  
Jean Marc Jancu ◽  
Michael Povolotskyi ◽  
Aldo Di Carlo
Keyword(s):  

2004 ◽  
Vol 51 (5) ◽  
pp. 741-748 ◽  
Author(s):  
F. Sacconi ◽  
A. Di Carlo ◽  
P. Lugli ◽  
M. Stadele ◽  
J.-M. Jancu
Keyword(s):  

2007 ◽  
Vol 47 (4-5) ◽  
pp. 694-696 ◽  
Author(s):  
F. Sacconi ◽  
J.M. Jancu ◽  
M. Povolotskyi ◽  
A. Di Carlo
Keyword(s):  

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 125-129
Author(s):  
S. J. Wigger ◽  
S. M. Goodnick ◽  
M. Saraniti

We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure.


2021 ◽  
Author(s):  
Ngoc Duc Le ◽  
Brice Davier ◽  
Philippe Dollfus ◽  
Jerome Saint Martin

Abstract A Full Band Monte Carlo simulatorhas been developed to considerphonon transmission across interfaces disposedperpendicularlyto the heat flux. This solver of the Boltzmann transport equation does not require any assumption on the shape the phonon distribution and can naturally consider all phonon transport regimes from the diffusive to the fully ballistic regime. This simulatoris used to study single and double Si/Ge heterostructures from the micrometer scale downto the nanometer scale,i.e. in all phonon transport regime from fully diffusive toballistic.A methodology to determine the thermal conductivity atthermal interfaces is presented.


Author(s):  
Jeff Gelles

Mechanoenzymes are enzymes which use a chemical reaction to power directed movement along biological polymer. Such enzymes include the cytoskeletal motors (e.g., myosins, dyneins, and kinesins) as well as nucleic acid polymerases and helicases. A single catalytic turnover of a mechanoenzyme moves the enzyme molecule along the polymer a distance on the order of 10−9 m We have developed light microscope and digital image processing methods to detect and measure nanometer-scale motions driven by single mechanoenzyme molecules. These techniques enable one to monitor the occurrence of single reaction steps and to measure the lifetimes of reaction intermediates in individual enzyme molecules. This information can be used to elucidate reaction mechanisms and determine microscopic rate constants. Such an approach circumvents difficulties encountered in the use of traditional transient-state kinetics techniques to examine mechanoenzyme reaction mechanisms.


Author(s):  
R. T. Chen ◽  
R.A. Norwood

Sol-gel processing has been used to control the structure of a material on a nanometer scale in preparing advanced ceramics and glasses. Film coating using the sol-gel process was also found to be a viable process technology in applications such as optical, porous, antireflection and hard coatings. In this study, organically modified silicate (Ormosil) coatings are applied to PET films for various industrial applications. Sol-gel materials are known to exhibit nanometer scale structures which havepreviously been characterized by small-angle X-ray scattering (SAXS), neutron scattering and light scattering. Imaging of the ultrafine sol-gel structures has also been performed using an ultrahigh resolution replica/TEM technique. The objective of this study was to evaluate the ultrafine structures inthe sol gel coatings using a direct imaging technique: atomic force microscopy (AFM). In addition, correlation of microstructures with processing parameters, coating density and other physical properties will be discussed.The materials evaluated are organically modified silicate coatings on PET film substrates. Refractive index measurement by the prism coupling method was used to assess density of the sol-gel coating.AFM imaging was performed on a Nanoscope III AFM (by Digital Instruments) using constant force mode. Solgel coating samples coated with a thin layer of Ft (by ion beam sputtering) were also examined by STM in order to confirm the structures observed in the contact type AFM. In addition, to compare the previous results, sol-gel powder samples were also prepared by ultrasonication followed by Pt/Au shadowing and examined using a JEOL 100CX TEM.


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