scholarly journals Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

2012 ◽  
Vol 59 (3) ◽  
pp. 602-609 ◽  
Author(s):  
Anisha Ramesh ◽  
Tyler A. Growden ◽  
Paul R. Berger ◽  
Roger Loo ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Doping Dependence ◽  
Tunneling Diodes ◽  
Delta Doping ◽  
Interband Tunneling

scholarly journals Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$-Doping Layers Grown by Chemical Vapor Deposition

2009 ◽  
Vol 30 (11) ◽  
pp. 1173-1175 ◽  
Author(s):  
Si-Young Park ◽  
R. Anisha ◽  
P.R. Berger ◽  
R. Loo ◽  
Ngoc Duy Nguyen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tunneling Diodes ◽  
Delta Doping ◽  
Interband Tunneling

C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

2016 ◽  
Vol 602 ◽  
pp. 24-28
Author(s):  
Yuji Yamamoto ◽  
Naofumi Ueno ◽  
Masao Sakuraba ◽  
Junichi Murota ◽  
Andreas Mai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Delta Doping ◽  
Pressure Chemical

scholarly journals Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 4 (S1) ◽  
pp. 305-309
Author(s):  
Jong-Hee Kim ◽  
Gye Mo Yang ◽  
Sung Chul Choi ◽  
Ji Youn Choi ◽  
Hyun Kyung Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Voltage Measurement ◽  
Desorption Process ◽  
Delta Doping ◽  
Metalorganic Chemical

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 1018 cm−3.

Sign in / Sign up

Export Citation Format

Share Document