External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode. Embedding SBD into MOSFET with short cycle length increases maximum source-drain voltage where body diode remains inactive, resulting in high current density of SBD current. We propose a MOSFET structure where an SBD is embedded into each unit cell and an additional doping is applied, which allows high current density in reverse operation without any activation of body diode. The proposed MOSFET was successfully fabricated and much higher reverse current density was demonstrated compared to the external SBD. We can expect to reduce total chip size of high voltage modules using the proposed MOSFET embedding SBD.
High voltage and high current density vertical GaN power diodes
