Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers

2017 ◽  
Vol 64 (4) ◽  
pp. 1606-1611 ◽  
Author(s):  
Baile Chen
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Type Ii Quantum Wells

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

Mid-IR interband cascade electroluminescence in type-II quantum wells

1996 ◽  
Vol 32 (17) ◽  
pp. 1621 ◽  
Author(s):  
R.Q. Yang ◽  
C.-H. Lin ◽  
P.C. Chang ◽  
S.J. Murry ◽  
D. Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Type Ii Quantum Wells

cw and femtosecond optical nonlinearities of type-II quantum wells

1991 ◽  
Vol 66 (10) ◽  
pp. 1358-1361 ◽  
Author(s):  
G. R. Olbright ◽  
W. S. Fu ◽  
A. Owyoung ◽  
J. F. Klem ◽  
R. Binder ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Nonlinearities ◽  
Type Ii ◽  
Type Ii Quantum Wells

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1040-L1042 ◽  
Author(s):  
Makoto Kudo ◽  
Kiyoshi Ouchi ◽  
Jun-ichi Kasai ◽  
Tomoyoshi Mishima
Keyword(s):  
Quantum Wells ◽  
Lattice Strain ◽  
Type Ii ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

scholarly journals Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells
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