Effect of Mechanical Strain on Electrical Performance of Flexible P-Type SnO Thin-Film Transistors

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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Effects of Mechanical Strain on the Electrical Performance of Amorphous Silicon Thin-Film Transistors with a New Gate Dielectric

MRS Proceedings ◽

10.1557/proc-1196-c02-02 ◽

2009 ◽

Vol 1196 ◽

Author(s):

Katherine Wei Song ◽

Lin Han ◽

Sigurd Wagner ◽

Prashant Mandlik

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Hybrid Material ◽

Thin Film Transistors ◽

Gate Dielectric ◽

Compressive Strain ◽

Mechanical Strain ◽

Electrical Performance ◽

Silicon Thin Film ◽

Transfer Characteristics

AbstractThe stiff SiNx gate dielectric in conventional amorphous silicon thin film transistors (TFTs) limits their flexibility by brittle fracture when in tension. We report the effect on the overall flexibility of TFTs of replacing the brittle SiNx gate dielectric with a new, resilient SiO2-silicone hybrid material, which is deposited by plasma enhanced chemical vapor deposition. Individual TFTs on a 50μm-thick polyimide foil were bent to known radii, and measurement of transfer characteristics were made both during strain and after re-flattening. Compared with conventional TFTs made with SiNx, TFTs made with the new hybrid material demonstrated similar flexibility when strained in compression and significantly increased flexibility when strained in tension. Under bending to compressive strain, all TFTs tested delaminated from the substrate for compressive strains greater than 2%. Conventional a-Si:H/SiNx TFTs have been previously found to delaminate at a similar compressive strain. Under bending to tensile strain, the most flexible TFTs made with the new hybrid material that were tested after re-flattening did not exhibit significant changes in transfer characteristics up to strains of ∼2.5%. Conventional a-Si:H/SiNx TFTs have been found to remain functional for strains of up to 0.5%, a value only one-fifth of that for TFTs made with the new hybrid material.

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Impact of repeated uniaxial mechanical strain on p-type flexible polycrystalline thin film transistors

Applied Physics Letters ◽

10.1063/1.4919890 ◽

2015 ◽

Vol 106 (18) ◽

pp. 183503 ◽

Cited By ~ 25

Author(s):

Bo-Wei Chen ◽

Ting-Chang Chang ◽

Yu-Ju Hung ◽

Tien-Yu Hsieh ◽

Ming-Yen Tsai ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Mechanical Strain ◽

Polycrystalline Thin Film ◽

P Type

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Effects of the active layers deposition temperature on the electrical performance of p-type SnO thin-film Transistors

Journal of the Korean Physical Society ◽

10.3938/jkps.65.286 ◽

2014 ◽

Vol 65 (3) ◽

pp. 286-290 ◽

Cited By ~ 7

Author(s):

Myeonghun U ◽

Hyuck-In Kwon ◽

In-Tak Cho ◽

Sung Hun Jin ◽

Jong-Ho Lee

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Deposition Temperature ◽

Electrical Performance ◽

Active Layers ◽

P Type

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WITHDRAWN: High electrical performance LTPS p-type and n-type polycrystalline silicon thin film transistors

Solid-State Electronics ◽

10.1016/j.sse.2007.10.043 ◽

2008 ◽

Author(s):

C. Caligiore ◽

E. Fontana ◽

S. Leonardi ◽

F. Tramontana

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Electrical Performance ◽

Silicon Thin Film ◽

P Type

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Effect of Illumination on Organic Polymer Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-771-l10.17 ◽

2003 ◽

Vol 771 ◽

Cited By ~ 3

Author(s):

Michael C. Hamilton ◽

Sandrine Martin ◽

Jerzy Kanicki

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Drain Current ◽

Charge Carriers ◽

Electrical Performance ◽

Organic Polymer ◽

Light Illumination ◽

Polymer Thin Film ◽

Channel Region ◽

White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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