Indirect In-Situ Junction Temperature Measurement for Condition Monitoring of GaN HEMT Devices during Application Related Reliability Testing

2021 ◽  
Author(s):  
MSc Sybille Ofner ◽  
Michael Glavanovics ◽  
Annette Mutze
Keyword(s):  
Temperature Measurement ◽  
Condition Monitoring ◽  
Junction Temperature ◽  
Reliability Testing ◽  
Gan Hemt

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

2008 ◽  
Vol 5 (6) ◽  
pp. 2010-2012 ◽  
Author(s):  
M. Germain ◽  
K. Cheng ◽  
J. Derluyn ◽  
S. Degroote ◽  
J. Das ◽  
...  
Keyword(s):  
Gate Leakage ◽  
Gan Hemt

Dynamic Impact Measurements on Crossings, in Free Floating and In-Situ Conditions

2014 ◽  
Author(s):  
M. A. Boogaard ◽  
A. L. Schwab ◽  
Z. Li
Keyword(s):  
Finite Element ◽  
Condition Monitoring ◽  
Impact Loading ◽  
Dynamic Behaviour ◽  
Element Model ◽  
Mode Shapes ◽  
Dynamic Impact ◽  
In Situ Test ◽  
In Situ Conditions

As vibration based condition monitoring requires a good understanding of the dynamic behaviour of the structure, a good model is needed. At the TU Delft a train borne monitoring system is being developed which currently focusses on crossings. Crossings are prone to very fast degradation due to impact loading. In this paper a finite element model of a free floating frog is presented and validated up to a 100 Hz using dynamic impact measurements. The mode shapes of the free floating frog are then also compared to some preliminary results from an in-situ test. This comparison shows that the in-situ frequencies can be up to twice the free floating frequency.

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