Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

2016 ◽  
Vol 63 (4) ◽  
pp. 1995-2004 ◽  
Author(s):  
Diane-Perle Sadik ◽  
Juan Colmenares ◽  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Mietek Bakowski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Transistors ◽  
Protection Circuits

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection

2014 ◽  
Author(s):  
Diane-Perle Sadik ◽  
Juan Colmenares ◽  
Dimosthenis Peftitsis ◽  
Georg Tolstoy ◽  
Jacek Rabkowski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Transistors

scholarly journals A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 4 (3) ◽  
pp. 978-987 ◽  
Author(s):  
Gianpaolo Romano ◽  
Asad Fayyaz ◽  
Michele Riccio ◽  
Luca Maresca ◽  
Giovanni Breglio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Mosfets ◽  
Comprehensive Study

scholarly journals Short Circuit Robustness and Carrier Lifetime in Silicon Carbide MOSFETs

2020 ◽  
Author(s):  
Bhagyalakshmi Kakarla ◽  
Alexander Tsibizov ◽  
Roger Stark ◽  
Ivana Kovacevic Badstubner ◽  
Ulrike Grossner
Keyword(s):  
Silicon Carbide ◽  
Carrier Lifetime ◽  
Short Circuit

Short Circuit Ruggedness of 600 V SiC Trench JFETs

2020 ◽  
Vol 1004 ◽  
pp. 933-938
Author(s):  
Vinoth Sundaramoorthy ◽  
Lukas Kranz ◽  
Stephan Wirths ◽  
Marco Bellini ◽  
Gianpaolo Romano ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Operating Temperature ◽  
Short Circuit ◽  
Short Circuit Current ◽  
State Resistance ◽  
Resistance Value ◽  
A Current ◽  
Short Circuit Condition

Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2 μm cell pitch had an on-resistance value around 40 mΩ and blocking voltages of ~600 V across the wafer. JFETs were successfully switched with a dc link voltage of 300 V, a current of 15 A and operating temperature of 125 °C. These JFETs were subjected to a short circuit condition with duration ranging from 10 μs to 45 μs at a dc link voltage of ~300 V, and operating temperatures of 25 °C and 125 °C. The device could withstand subsequent short circuit successfully without any failure at both 25 °C and 125 °C. The short circuit current showed consistent dependency on the applied gate voltage, when it was varied from 0 V to 15 V.

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