Angle dependent anisotropic magnetoresistance under the competition between anisotropic field and magnetic field

2021 ◽  
pp. 1-1
Author(s):  
Zhi Yang ◽  
Cen Wang ◽  
Long You ◽  
Xiaofei Yang ◽  
Yue Zhang
2008 ◽  
Vol 22 (25n26) ◽  
pp. 4434-4441
Author(s):  
SHIGEJI FUJITA ◽  
NEBI DEMEZ ◽  
JEONG-HYUK KIM ◽  
H. C. HO

The motion of the guiding center of magnetic circulation generates a charge transport. By applying kinetic theory to the guiding center motion, an expression for the magnetoconductivity σ is obtained: σ = e2ncτ/M*, where M* is the magnetotransport mass distinct from the cyclotron mass, nc the density of the conduction electrons, and τ the relaxation time. The density nc depends on the magnetic field direction relative to copper's fcc lattice, when Cu's Fermi surface is nonspherical with “necks”. The anisotropic magnetoresistance is analyzed based on a one-parameter model, and compared with experiments. A good fit is obtained.


2012 ◽  
Vol 1407 ◽  
Author(s):  
Elena Cimpoiasu ◽  
David Lashmore ◽  
Brian White ◽  
George A. Levin

ABSTRACTWe performed magnetoresistance (MR) measurements on bulk carbon nanotube sheets that had been partially aligned by post-fabrication stretching. The magnetic field was applied under different orientations with respect to the direction of the stretch, while the electric current was either parallel or perpendicular to the direction of the stretch. We found that the fielddependence of the MR is composed of two terms, one positive and one negative. The magnitudes of both terms are largest when the field is parallel with the direction of the stretch. If the sheets are treated with nitric acid, the positive term is removed and the MR is smallest when the field is aligned with the magnetic field. We attribute these anisotropic features to magnetoelastic effects induced by the coupling between the magnetic catalyst nanoparticles, the magnetic field, and the network of nanotubes.


2015 ◽  
Vol 15 (10) ◽  
pp. 7620-7623 ◽  
Author(s):  
Chunghee Nam

We show that a type of magnetic domain walls (DWs) can be monitored by anisotropic magnetoresistance (AMR) measurements due to a specific DW volume depending on the DW type in NiFe magnetic wires. A circular DW injection pad is used to generate DWs at a low magnetic field, resulting in reliable DW introduction into magnetic wires. DW pinning is induced by a change of DW energy at an asymmetric single notch. The injection of DW from the circular pad and its pinning at the notch is observed by using AMR and magnetic force microscope (MFM) measurements. A four-point probe AMR measurement allows us to distinguish the DW type in the switching process because DWs are pinned at the single notch, where voltage probes are closely placed around the notch. Two types of AMR behavior are observed in the AMR measurements, which is owing to a change of DW structures. MFM images and micromagnetic simulations are consistent with the AMR results.


2014 ◽  
Vol 605 ◽  
pp. 625-628
Author(s):  
N. Hadjigeorgiou ◽  
D. Kossivakis ◽  
P. Skafidas

The evolution in microelectronics and microarchitecture lead to the creation of cheap and reliable embedded magnetic sensors. Anisotropic Magnetoresistors (AMR), being able to measure one axis magnetic fields, have been employed in many applications so far. In this paper AMR sensor (HMC2003) manufactured by Honeywell Inc. was tested for its ability to detect the magnetic field of a vehicle. Two different sensor topologies were examined regarding their performance in vehicle detection and monitoring.


1999 ◽  
Vol 602 ◽  
Author(s):  
H. S. Wang ◽  
Y. F. Hu ◽  
E. Wertz ◽  
Qi Li

AbstractWe have studied the anisotropic magnetoresistance (AMR) of strained Pr0.67Sr0.33MnO3 thin films by measuring the MR as a function of the angle between the magnetic field direction and the substrate normal (out-of-plane). The results show that the compressive- and tensile-strained ultrathin films (5-15 nm) grown on LaAlO3 (001) (LAO) and SrTiO3 (001) (STO) substrates show unusually large out-of-plane AMR, but with opposite signs. In contrast, the almost strainfree films on the NdGaO3 (110) substrates show much smaller AMR over all the temperature and field ranges studied. Thick films on LAO and STO substrates also show much smaller AMR.


2020 ◽  
Vol 135 (8) ◽  
Author(s):  
Dirk J. Groenendijk ◽  
Nicola Manca ◽  
Joeri de Bruijckere ◽  
Ana Mafalda R. V. L. Monteiro ◽  
Rocco Gaudenzi ◽  
...  

Abstract$${\hbox {SrIrO}}_{3}$$ SrIrO 3 , the three-dimensional member of the Ruddlesden–Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin–orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of $${\hbox {SrIrO}}_{3}$$ SrIrO 3 thin films, which is closely linked to spin–orbit coupling and probes correlations between electronic transport, magnetic order and orbital states. We show that the low-temperature negative magnetoresistance is anisotropic with respect to the magnetic field orientation, and its angular dependence reveals the appearance of a fourfold symmetric component above a critical magnetic field. We show that this AMR component is of magnetocrystalline origin, and attribute the observed transition to a field-induced magnetic state in $${\hbox {SrIrO}}_{3}$$ SrIrO 3 .


2009 ◽  
Vol 94 (16) ◽  
pp. 162506 ◽  
Author(s):  
Lei Ding ◽  
Jiao Teng ◽  
Qian Zhan ◽  
Chun Feng ◽  
Ming-hua Li ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document