scholarly journals Prediction With Unpredictable Feature Evolution

Author(s):  
Bo-Jian Hou ◽  
Lijun Zhang ◽  
Zhi-Hua Zhou
Keyword(s):  
RSC Advances ◽  
2015 ◽  
Vol 5 (50) ◽  
pp. 39889-39898 ◽  
Author(s):  
Fanny Nascimento Costa ◽  
Tiago F. da Silva ◽  
Eduardo Miguez B. Silva ◽  
Regina C. R. Barroso ◽  
Delson Braz ◽  
...  

Synthesis and structural characterization of LASSBIO 1601: a cyclohexyl-N-acylhydrazone derivative.


2023 ◽  
Vol 55 (1) ◽  
pp. 1-37
Author(s):  
Claudio D. T. Barros ◽  
Matheus R. F. Mendonça ◽  
Alex B. Vieira ◽  
Artur Ziviani

Embedding static graphs in low-dimensional vector spaces plays a key role in network analytics and inference, supporting applications like node classification, link prediction, and graph visualization. However, many real-world networks present dynamic behavior, including topological evolution, feature evolution, and diffusion. Therefore, several methods for embedding dynamic graphs have been proposed to learn network representations over time, facing novel challenges, such as time-domain modeling, temporal features to be captured, and the temporal granularity to be embedded. In this survey, we overview dynamic graph embedding, discussing its fundamentals and the recent advances developed so far. We introduce the formal definition of dynamic graph embedding, focusing on the problem setting and introducing a novel taxonomy for dynamic graph embedding input and output. We further explore different dynamic behaviors that may be encompassed by embeddings, classifying by topological evolution, feature evolution, and processes on networks. Afterward, we describe existing techniques and propose a taxonomy for dynamic graph embedding techniques based on algorithmic approaches, from matrix and tensor factorization to deep learning, random walks, and temporal point processes. We also elucidate main applications, including dynamic link prediction, anomaly detection, and diffusion prediction, and we further state some promising research directions in the area.


Author(s):  
Fei Gao ◽  
Dieter Roller

Abstract Capturing design process is becoming an important topic of feature-based modeling, as well as in product data exchange, concurrent design, and cooperative design. Three critical issues on the modeling of design process are considered in this paper, namely, feature concepts, feature evolution, and the semantic consistencies of the states of product models. A semantics-based product model is introduced to facilitate the description of both conceptual and detailed models, and to maintain the semantic consistencies of product states. The process is represented by feature states and their evolution records. Feature type variation and prototype-based design are proposed to support feature evolution. A conceptual description of the design process and an example are given.


2019 ◽  
Vol 11 (2) ◽  
pp. 52 ◽  
Author(s):  
Lingling Zhao ◽  
Anping Zhao

To facilitate product developers capturing the varying requirements from users to support their feature evolution process, requirements evolution prediction from massive review texts is in fact of great importance. The proposed framework combines a supervised deep learning neural network with an unsupervised hierarchical topic model to analyze user reviews automatically for product feature requirements evolution prediction. The approach is to discover hierarchical product feature requirements from the hierarchical topic model and to identify their sentiment by the Long Short-term Memory (LSTM) with word embedding, which not only models hierarchical product requirement features from general to specific, but also identifies sentiment orientation to better correspond to the different hierarchies of product features. The evaluation and experimental results show that the proposed approach is effective and feasible.


2005 ◽  
Author(s):  
Hemant Mungekar ◽  
Young S. Lee ◽  
Shankar Venkataraman

Inductively coupled plasma (ICP) reactors are being used at low gas pressure (<100mTorr) and high plasma density ([e] > 1013/cm2) processes in semiconductor fabrication. In these reactors plasma is generated by inductively coupled electric field while positive ions are accelerated anisotropically by applying a negative bias RF to the substrate. Semiconductor manufacturers face many challenges as wafer size increases while device geometries decrease. Two key challenges for both process design and electronics processing equipment design are (a) scale up of process from 200mm to 300mm diameter substrate, and (b) deposition and etching features with high aspect ratios. A unified phenomenological model to explain profile evolution trend as a function of aspect ratio for deposition (gap fill) and trench etch using ICP reactors is presented. Trends for feature evolution as a function of pressure for gap fill and trench etch are reviewed and explained. The article emphasizes importance of low pressure for sub-100nm gap-fill and trench-etch applications in ICP processing reactors.


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