Feature Evolution During Sub 100NM Gap-Fill and Etch

2005 ◽  
Author(s):  
Hemant Mungekar ◽  
Young S. Lee ◽  
Shankar Venkataraman
Keyword(s):  
Inductively Coupled Plasma ◽  
Scale Up ◽  
High Plasma ◽  
Inductively Coupled ◽  
Positive Ions ◽  
Aspect Ratios ◽  
High Plasma Density ◽  
Semiconductor Fabrication ◽  
Wafer Size ◽  
Feature Evolution

Inductively coupled plasma (ICP) reactors are being used at low gas pressure (<100mTorr) and high plasma density ([e] > 1013/cm2) processes in semiconductor fabrication. In these reactors plasma is generated by inductively coupled electric field while positive ions are accelerated anisotropically by applying a negative bias RF to the substrate. Semiconductor manufacturers face many challenges as wafer size increases while device geometries decrease. Two key challenges for both process design and electronics processing equipment design are (a) scale up of process from 200mm to 300mm diameter substrate, and (b) deposition and etching features with high aspect ratios. A unified phenomenological model to explain profile evolution trend as a function of aspect ratio for deposition (gap fill) and trench etch using ICP reactors is presented. Trends for feature evolution as a function of pressure for gap fill and trench etch are reviewed and explained. The article emphasizes importance of low pressure for sub-100nm gap-fill and trench-etch applications in ICP processing reactors.

Mass Spectra and Ionization Temperatures in an Argon-Nitrogen Inductively Coupled Plasma

1983 ◽  
Vol 37 (5) ◽  
pp. 425-428 ◽  
Author(s):  
Robert S. Houk ◽  
Akbar Montaser ◽  
Velmer A. Fassel
Keyword(s):  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Extraction Process ◽  
Outer Flow ◽  
Inductively Coupled ◽  
Ion Extraction ◽  
Axial Channel ◽  
Positive Ions ◽  
Probable Occurrence ◽  
Charge Transfer Reactions

Positive ions were extracted from the axial channel of an inductively coupled plasma (ICP) in which the outer gas flow was Ar, N2, or a mixture of Ar and N2. Addition of N2 to the outer gas decreases the electron number density ( ne) in the axial channel. Ar+2, O2+, and ArH+ react with N-containing species in the plasma and/or during the ion extraction process. Ar+ remains abundant even if there is no Ar in the outer gas, which indicates the probable occurrence of charge transfer reactions between N2+ and Ar. The present work corroborates two general concepts upon which several theories of the origin of suprathermal ionization in ICPs are based: (a) species are physically transported from the induction region to the axial channel; and (b) these species may react with and ionize neutral species in the axial channel. Ionization temperatures ( Tion) measured from the ratio Cd+/I+ were 5750 to 6700 K for a N2 outer flow ICP at a forward power of 1.2 kW. This Tion range is significantly below that obtained for an Ar outer gas ICP under otherwise similar operating parameters.

scholarly journals The Association between Zinc and Copper and Cardiometabolic Risk Factors in Adults

2021 ◽  
Author(s):  
Dana Samir Al Kudsi ◽  
Sara Zeyad Hamad ◽  
Hanan Mohamed Al Keldi ◽  
Abdelhamid Kerkadi ◽  
Abdelali Agouni ◽  
...  
Keyword(s):  
Blood Pressure ◽  
Inductively Coupled Plasma ◽  
Cardiometabolic Risk ◽  
High Plasma ◽  
High Density Lipoproteins ◽  
P Value ◽  
Inductively Coupled ◽  
The Status ◽  
Low Hdl ◽  
Nutritional Disturbances

Cardiometabolic risk (CMR) factors increase the likelihood of developing cardiovascular diseases (CVD). In Qatar, 24% of the total deaths are attributed to CVDs. Several nutritional disturbances have been linked to high risk of CVD. Many studies have discussed the effects of zinc (Zn) and copper (Cu) on CMR factors; however, evidence has been controversial. This investigated the association between CMR factors and the status of Zn, Cu, and Zn/Cu ratio. A total of 575 Qatari adults (≥18 years) were obtained from Qatar Biobank. Plasma levels of Zn and Cu were determined using inductively coupled plasma mass spectrometry (ICP-MS). Anthropometric data and CMR factors were determined using standard methods. Adjusted associations between minerals and CMR were estimated by logistic regression. The associations’ strength was tested using partial correlation. Zn was not strongly correlated (p-value˃0.01) or significantly associated with CMR factors and metabolic syndrome (MetS). Cu levels correlated positively with body mass index (BMI) (0.23; p˂0.001), pulse rate (PR) (0.18; p˂0.001), total cholesterol (0.13; p=0.01), and high-density lipoproteins (HDL) (0.27; p˂0.001); and negatively with diastolic blood pressure (DBP) (−0.13; p=0.01). High Cu significantly decreased the risk of MetS (0.121; p˂0.001). Furthermore, Zn/Cu ratio positively correlated with waist circumference (0.13; p=0.01), systolic blood pressure (0.13; p˂0.01), and DBP (0.14; p˂0.01); and negatively with BMI (−0.19; p˂0.001), PR (−0.17; p˂0.001), and HDL (−0.27; p˂0.001). High Zn/Cu ratio increased the prevalence of low HDL (4.508; p˂0.001) and MetS (5.570; p˂0.01). These findings suggest that high Cu levels are associated with a protective effect on DBP, HDL, and MetS and that high plasma Zn/Cu ratio is associated with the risk of low HDL and MetS. We recommend future studies to focus on minerals status among abdominally obese and prediabetic subjects because of the probable link between low serum Zn and Cu and insulin resistance and CVD.

Characterization of Thin Film CdTe photovoltaic materials deposited by high plasma density magnetron sputtering

2011 ◽  
Vol 1323 ◽  
Author(s):  
A. Abbas ◽  
J.W. Bowers ◽  
B. Maniscalco ◽  
S. Moh ◽  
G.D West ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Plasma Density ◽  
Large Scale ◽  
Scale Up ◽  
High Plasma ◽  
Window Layer ◽  
Closed Field ◽  
Scale Production ◽  
Batch System ◽  
High Plasma Density

ABSTRACTA new magnetron sputtering strategy is introduced that utilizes high plasma density (~5mA.cm-2) to avoid or reduce high temperature processing. The technique uses magnetrons of opposing magnetic polarity to create a “closed field” in which the plasma density is enhanced without the need for high applied Voltages. A batch system has been used which employs a rotating vertical drum as the substrate carrier and a symmetrical array of linear magnetrons. The magnetrons are fitted with target materials for each of the thin films required in the photovoltaic (PV) stack including the CdTe absorber layer, CdS window layer, metal contact using the conventional superstrate configuration. The “closed field” sputtering technology allows scale up not only for larger batch system designs but it is also configurable for “in-line” or “roll to roll” formats for large scale production. The morphology of each of the layers is characterized using a variety of structural and optical techniques including Field Emission Gun SEM and X-ray diffraction (XRD).

Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs

2000 ◽  
Vol 622 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
A. G. Baca ◽  
C. G. Willison ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Bombardment ◽  
Critical Dimension ◽  
High Plasma ◽  
Substrate Material ◽  
Device Performance ◽  
Inductively Coupled ◽  
Profile Control ◽  
Etch Rates ◽  
Anisotropic Etch

ABSTRACTThe fabrication of a wide variety of GaN-based photonic and electronic devices depends on dry etching, which typically requires ion-assisted removal of the substrate material. Under conditions of both high plasma flux and energetic ion bombardment, GaN etch rates greater than 0.5 νm/min and anisotropic etch profiles are readily achieved in Inductively Coupled Plasma (ICP) etch systems. Unfortunately, under these conditions plasma-induced damage often occurs. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or profile control which can limit dimensional control and reduce the utility of the process for device applications requiring anisotropic etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in source resistance, reverse breakdown voltage, transconductance, and drain saturation current for GaN MESFET structures exposed to an Ar ICP plasma. In general, device performance was sensitive to ion bombardment energy and ion flux.

Ion density and temperature distributions in an inductively coupled high-plasma density reactor

1996 ◽  
Vol 24 (1) ◽  
pp. 129-130 ◽  
Author(s):  
D.P. Lymberopoulos ◽  
R.S. Wise ◽  
D.J. Economou ◽  
T.J. Bartel
Keyword(s):  
Plasma Density ◽  
High Plasma ◽  
Ion Density ◽  
Inductively Coupled ◽  
Temperature Distributions ◽  
High Plasma Density
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