A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2004.832547 ◽

2004 ◽

Vol 51 (4) ◽

pp. 1732-1736 ◽

Author(s):

B. Djezzar ◽

A. Smatti ◽

S. Oussalah

Keyword(s):

Extraction Method ◽

Low Frequencies ◽

Charge Pumping ◽

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Oxide-trap based on charge pumping (OTCP) extraction method for irradiated MOSFET Devices: Part II (Low frequencies)

2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515) ◽

10.1109/nssmic.2003.1352114 ◽

2003 ◽

Author(s):

B. Djezzar ◽

A. Smatti ◽

S. Oussalah

Keyword(s):

Extraction Method ◽

Low Frequencies ◽

Charge Pumping ◽

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Extended Oxide-Trap extraction method to low frequencies for irradiated MOS transistors

Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442) ◽

10.1109/icm.2003.237972 ◽

2003 ◽

Author(s):

B. Djezzar ◽

A. Smatti ◽

S. Oussalah

Keyword(s):

Extraction Method ◽

Mos Transistors ◽

Low Frequencies ◽

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Oxide-trap based on charge pumping (OTCP) extraction method for irradiated MOSFET Devices:Part I (High frequencies)

2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515) ◽

10.1109/nssmic.2003.1352076 ◽

2003 ◽

Author(s):

B. Djezzar ◽

S. Oussalah ◽

A. Smatri

Keyword(s):

Extraction Method ◽

High Frequencies ◽

Charge Pumping ◽

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A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2004.832549 ◽

2004 ◽

Vol 51 (4) ◽

pp. 1724-1731 ◽

Author(s):

B. Djezzar ◽

S. Oussalah ◽

A. Smatti

Keyword(s):

Extraction Method ◽

High Frequencies ◽

Charge Pumping ◽

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Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994552 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi

Keyword(s):

Reliability Analysis ◽

Trap Charge ◽

Charge Pumping ◽

Lightly Doped Drain

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Oxide-trap charge-pumping for radiation reliability issue in MOS devices

2009 4th International Conference on Design & Technology of Integrated Systems in Nanoscal Era ◽

10.1109/dtis.2009.4938073 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi ◽

Arezki Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Mos Devices ◽

Reliability Issue

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Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method

Journal of Applied Physics ◽

10.1063/1.361786 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4187 ◽

Author(s):

Y. Maneglia ◽

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Concentration Profiles ◽

Trap Concentration ◽

Charge Pumping ◽

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Why is oxide-trap charge-pumping (OTCP) method appropriate for extracting the radiation-induced traps in mosfet?

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173349 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi ◽

Arezki Mokrani

Keyword(s):

Trap Charge ◽

Charge Pumping ◽

Radiation Induced ◽

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A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique

IEEE Transactions on Electron Devices ◽

10.1109/16.817583 ◽

2000 ◽

Vol 47 (1) ◽

pp. 171-177 ◽

Author(s):

S. Mahapatra ◽

C.D. Parikh ◽

V. Ramgopal Rao ◽

C.R. Viswanathan ◽

J. Vasi

Keyword(s):

Charge Pumping ◽

Hot Carrier ◽

Comprehensive Study

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Characterization of oxide trap density with the charge pumping technique in dual-layer gate oxide

IEICE Electronics Express ◽

10.1587/elex.14.20170141 ◽

2017 ◽

Vol 14 (8) ◽

pp. 20170141-20170141 ◽

Author(s):

Younghwan Son ◽

Yoon Kim ◽

Myounggon Kang

Keyword(s):

Trap Density ◽

Charge Pumping ◽

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