A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique

2000 ◽  
Vol 47 (1) ◽  
pp. 171-177 ◽  
Author(s):  
S. Mahapatra ◽  
C.D. Parikh ◽  
V. Ramgopal Rao ◽  
C.R. Viswanathan ◽  
J. Vasi
Keyword(s):  
Charge Pumping ◽  
Hot Carrier ◽  
Oxide Trap ◽  
Comprehensive Study

Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements

2011 ◽  
Vol 178-179 ◽  
pp. 267-272 ◽  
Author(s):  
Ivan Starkov ◽  
Stanislav Tyaginov ◽  
Hubert Enichlmair ◽  
Jong Mun Park ◽  
Hajdin Ceric ◽  
...  
Keyword(s):  
Extraction Procedure ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Total Charge ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Degradation Modeling ◽  
Conventional Extraction ◽  
Oxide Trap

The interface state density profile for an unstressed transistor has been carefully extracted. The experimental evidence of profile non-uniformity is presented. A scheme to separate the bulk oxide trap contribution from the total charge pumping current is suggested as an improvement to the conventional extraction procedure. The obtained information is of high importance in the context of hot-carrier degradation modeling in order to allow for a more detailed verification of the model.

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation
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