Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method

Journal of Applied Physics ◽

10.1063/1.361786 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4187 ◽

Author(s):

Y. Maneglia ◽

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Concentration Profiles ◽

Trap Concentration ◽

Charge Pumping ◽

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Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.1595138 ◽

2003 ◽

Vol 94 (5) ◽

pp. 3239-3248 ◽

Author(s):

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Rigorous Analysis ◽

Trap Concentration ◽

Charge Pumping ◽

Energy Profiles

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A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Effect Transistor

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

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Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures

Journal of Applied Physics ◽

10.1063/1.4961871 ◽

2016 ◽

Vol 120 (8) ◽

pp. 085710 ◽

Author(s):

Yuki Fujino ◽

Koji Kita

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Interfaces ◽

Transient Capacitance ◽

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Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

IEEE Transactions on Nuclear Science ◽

10.1109/23.658981 ◽

1997 ◽

Vol 44 (6) ◽

pp. 2001-2006 ◽

Author(s):

F. Saigne ◽

L. Dusseau ◽

J. Fesquet ◽

J. Gasiot ◽

R. Ecoffet ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Effects ◽

Experimental Validation ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.72.235417 ◽

2005 ◽

Vol 72 (23) ◽

Author(s):

Ming-Pei Lu ◽

Ming-Jer Chen

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Energy ◽

Semiconductor System ◽

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Investigation of the charge pumping current in metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.343290 ◽

1989 ◽

Vol 65 (11) ◽

pp. 4311-4318 ◽

Author(s):

Gerard Ghibaudo ◽

Nelson S. Saks

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Semiconductor Structures

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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4936313 ◽

2015 ◽

Vol 118 (20) ◽

pp. 204107 ◽

Author(s):

V. Djara ◽

K. Cherkaoui ◽

M. A. Negara ◽

P. K. Hurley

Keyword(s):

Metal Oxide ◽

Charge Separation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Charge Pumping ◽

High K ◽

Inversion Charge

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Electrical and physical characteristics of HfLaON-gated metal–oxide-semiconductor capacitors with various nitrogen concentration profiles

Microelectronic Engineering ◽

10.1016/j.mee.2010.10.003 ◽

2011 ◽

Vol 88 (2) ◽

pp. 159-165 ◽

Author(s):

Chin-Lung Cheng ◽

Jeng-Haur Horng ◽

Hung-Yang Tsai

Keyword(s):

Metal Oxide ◽

Nitrogen Concentration ◽

Metal Oxide Semiconductor ◽

Physical Characteristics ◽

Oxide Semiconductor ◽

Concentration Profiles

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