scholarly journals A 4.5 MGy TID-Tolerant CMOS Bandgap Reference Circuit Using a Dynamic Base Leakage Compensation Technique

2013 ◽  
Vol 60 (4) ◽  
pp. 2819-2824 ◽  
Author(s):  
Ying Cao ◽  
Wouter De Cock ◽  
Michiel Steyaert ◽  
Paul Leroux
Keyword(s):  
Bandgap Reference ◽  
Reference Circuit ◽  
Compensation Technique

A CMOS Bandgap Reference with Temperature Compensation

2014 ◽  
Vol 667 ◽  
pp. 401-404
Author(s):  
Xi Chen ◽  
Liang Li ◽  
Xing Fa Huang ◽  
Xiao Feng Shen ◽  
Ming Yuan Xu
Keyword(s):  
Temperature Compensation ◽  
High Order ◽  
Cmos Process ◽  
Threshold Region ◽  
Bandgap Reference ◽  
Mos Transistor ◽  
First Order ◽  
Reference Circuit ◽  
Compensation Technique ◽  
Simulation Results

This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of Vbe. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show that the proposed circuit achieves 4.2 ppm/¡æ with temperature from-55 to 125 ¡æ, which is only a third than that of first-order compensated bandgap reference.

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

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