A CMOS Bandgap Reference with Temperature Compensation

2014 ◽  
Vol 667 ◽  
pp. 401-404
Author(s):  
Xi Chen ◽  
Liang Li ◽  
Xing Fa Huang ◽  
Xiao Feng Shen ◽  
Ming Yuan Xu
Keyword(s):  
Temperature Compensation ◽  
High Order ◽  
Cmos Process ◽  
Threshold Region ◽  
Bandgap Reference ◽  
Mos Transistor ◽  
First Order ◽  
Reference Circuit ◽  
Compensation Technique ◽  
Simulation Results

This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of Vbe. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show that the proposed circuit achieves 4.2 ppm/¡æ with temperature from-55 to 125 ¡æ, which is only a third than that of first-order compensated bandgap reference.

A Bandgap Reference with Temperature Coefficient of 13.2 ppm/°C

2014 ◽  
Vol 981 ◽  
pp. 66-69
Author(s):  
Ming Yuan Ren ◽  
En Ming Zhao
Keyword(s):  
Power Supply ◽  
Process Simulation ◽  
Output Voltage ◽  
Operating Temperature ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Analysis Method ◽  
Operation Condition ◽  
Reference Circuit ◽  
Simulation Results

This paper presents a design and analysis method of a bandgap reference circuit. The Bandgap design is realized through the 0.18um CMOS process. Simulation results show that the bandgap circuit outputs 1.239V in the typical operation condition. The variance rate of output voltage is 0.016mV/°C? with the operating temperature varying from-60°C? to 160°C?. And it is 3.27mV/V with the power supply changes from 1.8V to 3.3V.

A Bandgap Reference with High Order Temperature Compensation

2014 ◽  
Vol 1049-1050 ◽  
pp. 649-652
Author(s):  
Rong Ke Ye ◽  
Rong Bin Hu
Keyword(s):  
Temperature Compensation ◽  
High Performance ◽  
Temperature Stability ◽  
High Order ◽  
Bandgap Reference ◽  
Chip Area ◽  
Analog To Digital ◽  
Digital To Analog Converters ◽  
Reference Circuit ◽  
Digital Or

A kind of CMOS bandgap reference circuit with high order temperature compensation is introduced [1]. Compared to the traditional circuit, the bandgap reference proposed here has several advantages such as better temperature stability, smaller chip area, lower power consumption, self-power-on, and so on. Our design can be used in analog-to-digital or digital-to-analog converters, where high performance bandgap reference is required.

A Sub-1V High Precision CMOS Bandgap Reference

2013 ◽  
Vol 427-429 ◽  
pp. 1097-1100
Author(s):  
Qian Neng Zhou ◽  
Rong Xue ◽  
Hong Juan Li ◽  
Jin Zhao Lin ◽  
Yun Song Li ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Power Supply ◽  
Output Voltage ◽  
Supply Voltage ◽  
Piecewise Linear ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Power Supply Voltage ◽  
Compensation Technique ◽  
Simulation Results

In this paper, a low temperature coefficient bandgap voltage (BGR) is designed for A/D converter by adopting piecewise-linear compensation technique. The designed BGR is analyzed and simulated in SMIC 0.18μm CMOS process. Simulation results show that the PSRR of the designed BGR achieves-72.51dB, -72.49dB, and-70.58dB at 10Hz, 100Hz and 1kHz respectively. The designed BGR achieve the temperature coefficient of 1.57 ppm/°C when temperature is in the range from-35°C to 125°C. When power supply voltage VDD changes from 1V to 7V, the deviation of the designed BGR output voltage VREF is only 4.465μV.

Operational Transconductance Amplifier-Based Electronically Controllable Memcapacitor and Meminductor Emulators

2021 ◽  
pp. 2150222
Author(s):  
Eyyup demir ◽  
Abdullah Yesil ◽  
Yunus Babacan ◽  
Tevhit Karacali
Keyword(s):  
Process Parameters ◽  
High Order ◽  
Crucial Importance ◽  
Operational Transconductance Amplifier ◽  
Passive Components ◽  
Mos Transistor ◽  
Transconductance Amplifier ◽  
Simulation Results ◽  
Layout Area ◽  
Electronically Controllable

In this paper, two simple circuits are presented to emulate both memcapacitor and meminductor circuit elements. The emulation of these components has crucial importance since obtaining these high-order elements from markets is difficult when compared to resistor, capacitor and inductor. For this reason, we proposed Multi-Output Operational Transconductance Amplifier (MO-OTA)-based electronically controllable memcapacitor and meminductor circuits. To operate the MOS transistor as a capacitor, drain and source terminals are connected to each other. The memcapacitor behavior is obtained by driving the connected terminals with suitable voltage values. Only a few active and grounded passive components which are found in markets easily are used to emulate meminductive behavior. Furthermore, all passive elements in the circuit are grounded. All simulation results for memcapacitor and meminductor emulators are obtained successfully when compared to previous studies. For all analyses, MO-OTA is laid using the Cadence Spectre Analog Environment with TSMC 0.18[Formula: see text][Formula: see text]m process parameters and occupied a layout area of only 86.21[Formula: see text][Formula: see text]m.

scholarly journals A 4.5 MGy TID-Tolerant CMOS Bandgap Reference Circuit Using a Dynamic Base Leakage Compensation Technique

2013 ◽  
Vol 60 (4) ◽  
pp. 2819-2824 ◽  
Author(s):  
Ying Cao ◽  
Wouter De Cock ◽  
Michiel Steyaert ◽  
Paul Leroux
Keyword(s):  
Bandgap Reference ◽  
Reference Circuit ◽  
Compensation Technique

scholarly journals A Power and Area Efficient CMOS Bandgap Reference Circuit with an Integrated Voltage-Reference Branch

2019 ◽  
Author(s):  
Santunu Sarangi ◽  
Dhananjaya Tripathy ◽  
Subhra Sutapa Mohapatra ◽  
Saroj Rout
Keyword(s):  
Total Power ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Temperature Drift ◽  
Silicon Area ◽  
Total Power Consumption ◽  
Reference Circuit ◽  
Reference Design ◽  
Bipolar Device

This work presents a compact and low power bandgap voltage reference design using self-biased current mirror circuit. This design eliminates the standard complementary-to-absolute-temperature (CTAT) bipolar device in the voltage-reference branch, reducing the bipolar area by 20 percent. Instead, the design shares the same bipolar device in the main CTAT branch for generating the reference voltage. An additional benefit of eliminating the voltage-reference branch is the reduction of total power consumption by approximately 30 percent. This novel topology reduces power and area of the core bandgap reference circuit without compromising temperature drift performance. Designed, fabricated and functionally tested in a 0.6 um CMOS process. The simulation result shows the temperature coefficient of this design is 6.3 ppm/C for a temperature range of -40C to 125C$. This bandgap reference design occupies a silicon area of 0.018 mm^2 and draws an average quiescent current of 2 uA from a supply voltage of 3.3-5V. The simulated flicker voltage noise is 4.34 uV/sqrt-Hz at 10 Hz.

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