ABSTRACTAluminum (Al) and argon (Ar) ions were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV at a dose of 2 × 1016 cm-2. After annealing at 1600 °C for 5–60 minutes, Schottky diodes were fabricated on the ion implanted samples. Deep Level Transient Spectroscopy (DLTS) was used to characterize ion implantation induced defects. A defect at EC-0.18 eV was observed in the Al+ implanted devices annealed for five and fifteen minutes. However, annealing for 30 minutes produced an additional deeper defect at EC -0.24 eV. This defect annealed out after a sixty minute anneal. DLTS studies of Ar+ implanted devices showed six defect levels at EC -0.18 eV, EC -0.23 eV, EC -0.31 eV, EC -0.38eV, EC -0.72 eV, and EC -0.81eV. These defects are attributed to intrinsic-related defects. It is suggested that “hot” implantation of Al+ inhibits the formation of intrinsic-related defects. While “hot” implantation of Ar+ into 4H-SiC does not reduce the concentration of the vacancies and interstitials.
