Ion Implantation Induced Deep Defects in n-type 4H-Silicon Carbide

2002 ◽  
Vol 742 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
M. A. Capano
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Epitaxial Layers ◽  
Defect Levels ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Implanted Devices

ABSTRACTAluminum (Al) and argon (Ar) ions were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV at a dose of 2 × 1016 cm-2. After annealing at 1600 °C for 5–60 minutes, Schottky diodes were fabricated on the ion implanted samples. Deep Level Transient Spectroscopy (DLTS) was used to characterize ion implantation induced defects. A defect at EC-0.18 eV was observed in the Al+ implanted devices annealed for five and fifteen minutes. However, annealing for 30 minutes produced an additional deeper defect at EC -0.24 eV. This defect annealed out after a sixty minute anneal. DLTS studies of Ar+ implanted devices showed six defect levels at EC -0.18 eV, EC -0.23 eV, EC -0.31 eV, EC -0.38eV, EC -0.72 eV, and EC -0.81eV. These defects are attributed to intrinsic-related defects. It is suggested that “hot” implantation of Al+ inhibits the formation of intrinsic-related defects. While “hot” implantation of Ar+ into 4H-SiC does not reduce the concentration of the vacancies and interstitials.

Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS

2011 ◽  
Vol 178-179 ◽  
pp. 366-371
Author(s):  
Łukasz Gelczuk ◽  
Maria Dabrowska-Szata ◽  
Mariusz Sochacki ◽  
Jan Szmidt
Keyword(s):  
Ion Implantation ◽  
Line Shape ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Double Peak ◽  
Implantation Process ◽  
Transient Spectroscopy

Deep-level defects in 4H-SiC Schottky diodes were studied using deep level transient spectroscopy (DLTS). The epitaxial layers, doped with N and grown on standard n+4H-SiC substrates were exposed to aluminium ion implantation process under the Schottky contact and of junction termination extension (JTE). The studies performed within 80-400 K temperature range revealed five deep electron traps, with a dominant double peak at around room temperature related to the Z1/Z2 defect. The thorough analysis of the DLTS-line shape and DLTS-line behaviour on DLTS measurement conditions made possible to distinguish and identify all the observed deep levels.

Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies

2004 ◽  
Vol 815 ◽  
Author(s):  
A. O. Evwaraye ◽  
S. R. Smith ◽  
W. C. Mitchel ◽  
G. C. Farlow ◽  
M. A. Capano
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Schottky Diodes ◽  
Annealing Behavior ◽  
Argon Ions ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Post Implantation

AbstractArgon ions (Ar+) were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV and at a dose of 2 × 1016 cm−2. After post-implantation annealing at 1600 °C, Schottky diodes were fabricated on the ion implanted samples. Bulk n-type 4H-SiC samples were irradiated at room temperature with 1 MeV electrons at doses of 1 × 1016 to 5.1 × 1017 el/cm2. The current density of the beam was 0.91 μA/cm2. Deep Level Transient Spectroscopy (DLTS) was used to characterize the induced defects. DLTS studies of Ar+ implanted samples showed six defect levels at EC – 0.18 eV, EC – 0.23eV, EC – 0.31eV, EC – 0.38 eV, EC – 0.72 eV, and EC – 0.81 eV. Z1/Z2 defect is the dominant defect in the electron irradiated sample and anneals out completely after 10 minutes at 1000 °C. However, Z1/Z2 defect in Ar+ implanted samples was stable up to 1600 °C. It is suggested that the annealing behavior of Z1/Z2 depends on the source of its formation.

Lateral Diffusion and Capture of Iron in P-Type Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Kevin L. Beaman ◽  
Aditya Agarwal ◽  
Sergei V. Koveshnikov ◽  
George A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Lateral Diffusion ◽  
Lateral Motion ◽  
Dislocation Loops ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type

AbstractThe lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities was done by diffusing to laterally placed dislocation loops formed by a self aligned ion implantation. Lateral changes in Fe concentration were determined using capacitance-voltage and deep level transient spectroscopy.

Vacancy Clusters in Germanium

2007 ◽  
Vol 131-133 ◽  
pp. 125-130 ◽  
Author(s):  
Anthony R. Peaker ◽  
Vladimir P. Markevich ◽  
J. Slotte ◽  
K. Kuitunen ◽  
F. Tuomisto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Measurements ◽  
Coulombic Repulsion ◽  
Radiation Induced ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Induced Defects

Fast neutron irradiation of germanium has been used to study vacancy reactions and vacancy clustering in germanium as a model system to understand ion implantation and the vacancy reactions which are responsible for the apparently low n-type doping ceiling in implanted germanium. It is found that at low neutron doses (~1011cm-2) the damage produced is very similar to that resulting from electron or gamma irradiation whereas at higher doses (> 1013cm-2) the damage is similar to that resulting from ion implantation as observed in the region near the peak of a doping implant. Electrical measurements including CV profiling, spreading resistance, Deep- Level Transient-Spectroscopy and high resolution Laplace Deep-Level Transient-Spectroscopy have been used in conjunction with positron annihilation and annealing studies. In germanium most radiation and implantation defects are acceptor like and in n-type material the vacancy is negatively charged. In consequence the coulombic repulsion between two vacancies and between vacancies and other radiation-induced defects mitigates against the formation of complexes so that simple defects such as the vacancy donor pair predominate. However in the case of ion implantation and neutron irradiation it is postulated that localized high concentrations of acceptor like defects produce regions of type inversion in which the vacancy is neutral and can combine with itself or with other radiation induced acceptor like defects. In this paper the progression from simple damage to complex damage with increasing neutron dose is examined.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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